SBRT6U45LP 6A TRENCH SBR TRENCH SUPER BARRIER RECTIFIER Product Summary Features and Benefits Patented Trench SBR Technology Provides Superior Avalanche V (MAX) (V) I (mA) F R(MAX) V (V) I (A) RRM O +25C +25C Capability Versus Schottky Diodes, Ensuring More Rugged and 45 6 0.52 0.15 Reliable End Applications Reduced Ultra-Low Forward Voltage Drop (V ) Better Efficiency F And Cooler Operation Reduced High Temperature Reverse Leakage Increased Reliability Against Thermal Runaway Failure In High Temperature Operation Totally Lead-Free Finish & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data The SBRT6U45LP provides very low V and excellent reverse Case: U-DFN3030-8 F leakage stability at high temperatures. It is ideal for use as bypass Case Material: Molded Plastic, Green Molding Compound diode and rectifier, freewheel diode or blocking diode in applications UL Flammability Classification Rating 94V-0 such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Solar Panels Polarity: See Below Blocking Diode Weight: 0.0199 grams (Approximate) Bypass Diode Boost Diode Recirculating Diode U-DFN3030-8 Top View Schematic and Pin Configuration Bottom View Ordering Information (Note 4) Part Number Case Packaging SBRT6U45LP-7 U-DFN3030-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See SBRT6U45LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V RWM 45 V DC Blocking Voltage V RM Average Rectified Output Current I 6 A O Non-Repetitive Peak Forward Surge Current 8.3ms 55 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) 5.5 C/W R JC Typical Thermal Resistance Junction to Ambient (Note 5) R 65 C/W JA -55 to +150 Operating Temperature Range V 80% V R RRM +175 T C V 50% V J R RRM +200 DC Forward Mode (Note 7) Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop (Note 6) V 0.52 V I = 6A, T = +25C F F J 150 A V = 45V, T = +25C R J Leakage Current (Note 6) I R 6.5 mA V = 45V, T = +125C R J Notes: 5. Device mounted on FR-4 PCB pad layout 1-inch 2oz copper. 6. Short duration pulse test used to minimize self-heating effect. 7. Max junction temperature guaranteed for two hours. 10 100000 T = 175C A T = 175C A 10000 T = 150C A T = 150C A T = 125C A 1 1000 T = 85C A 100 0.1 T = 125C A 10 T = 25C A 1 T = 85C 0.01 A 0.1 T = 25C A 0.01 0.001 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 600 V , REVERSE VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (mV) R F Figure 2 Typical Reverse Characteristics Figure 1 Typical Forward Characteristics 2 of 5 SBRT6U45LP August 2019 Diodes Incorporated www.diodes.com Document number: DS37480 Rev. 6 - 2 I , INSTANTANEOUS FORWARD CURRENT (A) F I , LEAKAGE CURRENT (A) R