SDM01U50CP3 0.1A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE Product Summary Features and Benefits 2 0.18mm Footprint, Off Board Profile of 0.275mm V Max (mV) F VRRM (V) IO (mA) IR Max (A) +25C +25C Very Low Forward Voltage Minimizes Power Dissipation 50 100 500 25 Losses Low Leakage Maximizes Battery Power Soft, Fast Switching Capability Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) The SDM01U50CP3 is a 50-volt 100mA Schottky Barrier Diode that is For automotive applications requiring specific change optimized for low forward voltage drop and low leakage current. Its control (i.e. parts qualified to AEC-Q100/101/200, PPAP housed in a compact Chip Scale Package (CSP) that occupies only capable, and manufactured in IATF 16949 certified 2 0.18mm board space. The low thermal resistance enables designers facilities), please contact us or your local Diodes to meet design challenges of increasing efficiency while reducing representative. board space. It is ideally suited for use in portable applications. SDM01U50CP3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 50 V RRM Average Rectified Output Current I 100 mA O 3 A Repetitive Peak Forward Current, tP 1ms 0.25 IFRM Non-Repetitive Peak Forward Surge Current, 8.3ms I 4 A FSM Single Half Sine-Wave Superimposed on Rated Load ESD Rating: Human Body Model 8 ESD kV Machine Model 0.4 Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Notes 5 & 6) R 220 C/W JA Operating Temperature Range (Note 6) T -55 to +150 C J Storage Temperature Range -55 to +150 C TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition IF = 1mA, TJ = +25C 240 300 Forward Voltage Drop V 305 380 mV I = 10mA, T = +25C F F J 420 500 IF = 100mA, TJ = +25C 1 8 VR = 30V, TJ = +25C Leakage Current (Note 7) I A R 4 25 VR = 50V, TJ = +25C Junction Capacitance CJ 7.5 pF VR = 5V, TJ = +25C , f = 1MHz Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per