SDM02U30CSP 0.2A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE Product Summary Features and Benefits 2 VRRM (V) IO (mA) VF Max (V) +25C IR Max (A) +25C 0.18mm Footprint, Off Board Profile of 0.28mm 30 200 0.50 9 Low Forward Voltage of 0.50V (Max) Minimizes Power Dissipation Losses Low Leakage Maximizes Battery Power Description Soft, Fast Switching Capability The SDM02U30CSP is a 30-Volt 0.2A Schottky Barrier Diode that is Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) optimized for low forward voltage drop and low leakage current. Its Halogen and Antimony Free. Green Device (Note 3) housed in a compact Chip Scale Package (CSP) that occupies only 2 0.18mm board space. The low thermal resistance enables designers to meet design challenges of increasing efficiency while reducing board space. It is ideally suited for use in portable applications. Mechanical Data Applications Blocking Diode Case: X3-WLB0603-2 Reverse Protection Diode Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Polarity Indicator: Cathode Dot Terminals: NiAu Bump. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.1mg (Approximate) X3-WLB0603-2 Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging SDM02U30CSP-7 X3-WLB0603-2 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SDM02U30CSP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Average Rectified Output Current I 0.2 A O Non-Repetitive Peak Forward Surge Current 8.3ms 4.5 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 215 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.24 0.29 I = 1mA, T = +25C F J 0.30 0.34 I = 10mA, T = +25C F J 0.40 Forward Voltage Drop V 0.46 V I = 100mA, T = +25C F F J 0.45 0.50 I = 200mA, T = +25C F J 0.39 I = 200mA, T = +125C F J 0.4 2.0 A V = 10V, T = +25C R J Leakage Current (Note 6) 1.5 9 A I V = 30V, T = +25C R R J 0.7 mA V = 30V, T = +125C R J Junction Capacitance 7 pF C V = 10V, T = +25C , f = 1MHz T R J Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per