Green SDM1100S1F SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features and Benefits Low forward voltage (V ) minimizes conduction losses and F V (V) I (A) V (V) +25C I (A) +25C RRM O F(MAX) R(MAX) improving efficiency 100 1.0 0.82 5 Reduced High Temperature Reverse Leakage Increased Reliability against Thermal Runaway Failure in High Temperature Operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The device is a single rectifier packaged in SOD123F (Type B). Case: SOD123F (Type B) Offering low V and excellent high temperature stability this device is F Case Material: Molded Plastic, Green Molding Compound. ideal for use in general rectification applications as a: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Boost Diode Terminals: Matte Tin Finish Annealed over Copper Leadframe. Blocking Diode Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.015 grams (Approximate) SOD123F (Type B) Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging SDM1100S1F-7 SOD123F (Type B) 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SDM1100S1F Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 50 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 5) 135 C/W R JA Typical Thermal Resistance, Junction to Case (Note 5) 20 C/W R JC Typical Thermal Resistance, Junction to Ambient (Note 6) 85 C/W R JA Typical Thermal Resistance, Junction to Case (Note 6) 12 C/W R JC Operating Junction Temperature Range T -55 to +150 C J Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 100 V I = 1.0mA (BR)R R I = 1A, T = +25C 0.75 0.82 F J Forward Voltage Drop V 0.81 V I = 2A, T = +25C F F J 0.60 I = 1A, T = +125C F J 0.15 5 A V = 100V, T = +25C R J Leakage Current (Note 7) I R 0.110 5 mA V = 100V, T = +125C R J Total Capacitance C 28 pF V = 4V, f = 1MHz T R Notes: 5. Device mounted on 1 x MRP FR-4 PC board, 2oz. 6. Device mounted on 1inch sq. copper pad, 2oz. 7. Short duration pulse test used to minimize self-heating effect. 10 10000 1000 o 150 C o 150 C 1 100 o 125 C 10 o 125 C o 85 C o 85 C 0.1 1 o 25 C o 25 C o 0.1 -55 C o -55 C 0.01 0.01 0 20 40 60 80 100 0 500 1000 1500 2000 V , REVERSE VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (mV) R F Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics 2 of 4 SDM1100S1F March 2016 Diodes Incorporated www.diodes.com Document number: DS38301 Rev. 2 - 2 NEW PRODUCT I , INSTANTANEOUS FORWARD CURRENT F (A) I , LEAKAGE CURRENT (A) R