SDM160S1F Green 1A SCHOTTKY Product Summary Features and Benefits V Max (V) I Max (mA) F R Guard Ring Die Construction for Transient Protection V (V) I (A) RRM O +25C +25C Low Power Loss, High Efficiency 60 1 0.53 0.06 Interlocking Clip Design for High Surge Current Capacity Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (SDM160S1FQ) Mechanical Data Description and Applications Case: SOD123F The SDM160S1F is a single rectifier packaged in SOD123F. Case Material: Molded Plastic, Green Molding Compound. UL Offering low V , low power loss and high efficiency, this device is F Flammability Classification Rating 94V-0 ideal for use in general rectification applications as a: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Boost Diode Solderable per MIL-STD-202, Method 208 Blocking Diode Polarity: Cathode Band Weight: 0.015 grams (Approximate) SOD123F Top View Ordering Information (Note 4) Part Number Case Packaging SDM160S1F-7 SOD123F 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SDM160S1F Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 60 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current I 50 A FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit R Typical Thermal Resistance Junction to Case (Note 5) JC 40 R Typical Thermal Resistance Junction to Ambient (Note 5) JA 110 Typical Thermal Resistance Junction to Case (Note 6) R 8 C/W JC Typical Thermal Resistance Junction to Ambient (Note 6) 75 R JA Typical Thermal Resistance Junction to Solder point (Note 6) 18 R JS Operating and Storage Temperature Range T , T -55 to +175 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 60 V I = 1.0mA (BR)R R 0.32 0.37 I = 0.1A, T = +25C F J Forward Voltage Drop 0.43 0.49 V V I = 0.7A, T = +25C F F J 0.46 0.53 I = 1A, T = +25C F J V = 10V, T = +25C R J 0.002 0.010 0.060 V = 60V, T = +25C R J Leakage Current (Note 7) mA I R 0.40 V = 60V, T = +85C R J 3.7 V = 60V, T = +125C R J Total Capacitance 48 pF C V = 10V, f = 1MHz T R Notes: 5. Device mounted on 1*MRP FR-4 PC board, 2oz. 6. Device mounted on 1-inch sq. copper pad, 2oz. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 SDM160S1F August 2016 Diodes Incorporated www.diodes.com Document number: DS38450 Rev. 5 - 2