SDM1L20DCP3 1A DUAL COMMON CATHODE SCHOTTKY BARRIER DIODE DIE SIZE PACKAGE Product Summary Features and Benefits 2 0.6mm Footprint, Off Board Profile of 0.275mm V (V) I (A) V Max (V) +25C I Max (A) +25C RRM O F R Low Forward Voltage Minimizes Power Dissipation Losses 20 1 0.50 100 Low Leakage Maximizes Battery Power Soft, Fast Switching Capability Description and Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The SDM1L20DCP3 is a 20V Dual Common Cathode Schottky Barrier Diodes that is optimized for very low forward voltage drop and low leakage current. Its housed in a compact die size package that Mechanical Data 2 occupies only 0.6mm board space with low profile. The low thermal Case: X3-DSN1006-3 resistance enables designers to meet design challenges of increasing Moisture Sensitivity: Level 1 per J-STD-020 efficiency while reducing board space. It is ideally suited for use in Polarity Indicator: Cathode Dot portable applications such as: Terminals: NiAu Bump. Solderable per MIL-STD-202, Method e4 208 Blocking Diode Weight: 0.1mg (Approximate) Reverse Protection Diode Boost Diode X3-DSN1006-3 2 1 3 Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging SDM1L20DCP3-7 X3-DSN1006-3 5,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See SDM1L20DCP3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Average Rectified Output Current (Total) I 1 A O Repetitive Peak Forward Current, t 1ms 0.25 (Single Diode) I 3 A p FRM Non-Repetitive Peak Forward Surge Current, 8.3ms I 10 A FSM Single Half Sine-Wave Superimposed on Rated Load (Single Diode) ESD Rating Human Body Model 8 ESD kV Charged Device Model 1 Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 245 C/W R JA Typical Thermal Resistance Junction to Ambient (Note 6) 105 C/W R JA Operating Temperature Range T -55 to +150 C J Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 10mA, T = +25C 210 260 F J 290 350 I = 100mA, T = +25C F J Forward Voltage Drop (Single Diode) V mV F 330 400 I = 200mA, T = +25C F J 420 500 I = 500mA, T = +25C F J 15 50 V = 10V, T = +25C Leakage Current (Note 7) (Single R J A I R Diode) 32 100 V = 20V, T = +25C R J Junction Capacitance (Single Diode) 18 pF C V = 5V, T = +25C, f = 1MHz J R J Reverse Recovery Time (Single 8.6 ns t I = 10mA, I = 0.1 I RR F RR R Diode) Notes: 5. Device mounted on FR-4 substrate PC board, 2oz Cu with minimum recommended pad layout per