SDM1U100S1F Green 1A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits V Max (V) I Max (A) F R Guard Ring Die Construction for Transient Protection V (V) I (A) RRM O +25C +25C Low Power Loss, High Efficiency 100 1 0.77 0.15 Interlocking Clip Design for High Surge Current Capacity Qualified to AEC-Q101 Standards Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Case: SOD123F (Standard) The SDM1U100S1F is a single rectifier packaged in SOD123F Case Material: Molded Plastic, Green Molding Compound. (Standard). Offering low V , low power loss and high efficiency, this F UL Flammability Classification Rating 94V-0 device is ideal for use in general rectification applications as a: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Boost Diode Solderable per MIL-STD-202, Method 208 Blocking Diode Polarity: Cathode Band Weight: 0.015 grams (Approximate) SOD123F (Standard) Top View Ordering Information (Note 4) Part Number Case Packaging SDM1U100S1F-7 SOD123F (Standard) 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See SDM1U100S1F Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derating current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current I 50 A FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit R JC Typical Thermal Resistance Junction to Case (Note 5) 50 Typical Thermal Resistance Junction to Ambient (Note 5) R 120 JA C/W Typical Thermal Resistance Junction to Case (Note 6) 40 R JC Typical Thermal Resistance Junction to Ambient (Note 6) 100 R JA Operating and Storage Temperature Range T , T -55 to +175 C J STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 100 V I = 1.0mA R R I = 1A, T = +25C 0.72 0.77 F J Forward Voltage Drop V V F 0.58 0.67 I = 1A, T = +125C F J 0.035 0.15 V = 100V, T = +25C R J Leakage Current (Note 7) I A R 65 500 V = 100V, T = +125C R J Total Capacitance C 42 pF V = 4V, f = 1MHz T R Notes: 5. Device mounted on FR-4 substrate, 1 *1 , 2oz, single-sided, PC boards with 0.1 *0.15 copper pad. 6. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 SDM1U100S1F September 2017 Diodes Incorporated www.diodes.com Document number: DS39041 Rev. 4 - 2 NEW PRODUCT