SDM1U20CSP P 1.0A SCHOTTKY BARRIER RECTIFER CHIP SCALE PACKAGE Product Summary Features and Benefits V (V) I (A) V Max (V) I Max (A) Low forward voltage (V ) minimizes conduction losses and RRM O F R F 20 1.0 0.44 100 improves efficiency. Reduced high-temperature reverse leakage. Increased reliability against thermal runaway failure in high temperature operation. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Case: X3-WLB1406-2 The SDM1U20CSP is a 20V, 1A Schottky barrier rectifier that is Moisture Sensitivity: Level 1 per J-STD-020 optimized for low, forward-voltage drop and low leakage current. Polarity: Cathode Dot Housed in a compact chip scale package (CSP), the SDM1U20CSP 2 Weight: 0.001 grams (Approximate) occupies only 0.84 mm board-space with low profile. The low thermal resistance enables designers to meet design challenges of increasing efficiency while at the same time reducing board space. It is ideally suited for use in portable applications as: Blocking Diodes Boost Diodes Switching Diodes Reverse Protection Diodes Pin 1 Cathode Notch Anode Cathode Device Schematic Anode Cathode Ordering Information (Note 4) Part Number Case Packaging SDM1U20CSP-7 X3-WLB1406-2 5,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SDM1U20CSP P Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage 20 V V RRM Average Rectified Output Current 1.0 A I O Repetitive Peak Forward Current I 5.0 A FRM (Pulse Wave = 1 Sec, Duty Cycle = 66%) Non-Repetitive Peak Forward Surge Current 8.3ms 18 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) R 140 C/W JA Typical Thermal Resistance Junction to Ambient (Note 6) R 73 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 0.39 I = 0.5A F Forward Voltage Drop V mV F 0.44 I = 1.0A F 25 V = 10V R Reverse Current (Note 7) A I R 100 V = 20V R Junction Capacitance C 76 pF V = 4V, f = 1.0MHz J R Notes: 5. Device mounted on FR-4 PCB, 2oz. Copper, minimum recommended pad layout per