SDM20U40Q SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary ( T = +25C) Features and Benefits A Low Forward-Voltage Drop V (V) I (mA) V (V) I (A) RRM O F(MAX) R(MAX) Guard-Ring Construction for Transient Protection 40 250 0.6 5 Negligible Reverse-Recovery Time Low Reverse Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data SMPS Case: SOD523 DC-DC Converter Case Material: Molded Plastic,Gree Molding Compound, Freewheeling Diodes UL Flammability Classification Rating 94V-0 Reverse Polarity Protection Moisture Sensitivity: Level 1 per J-STD-020 Blocking Diodes Terminal Connections: Cathode Band Terminals: FinishMatte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.002 grams (Approximate) Top View Ordering Information (Note 5) Part Number Packaging Shipping SDM20U40Q-7 SOD523 3,000/Tape & Reel SDM20U40Q-13 SOD523 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See SDM20U40Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 40 V RWM DC Blocking Voltage V R RMS Reverse Voltage 28 V V R(RMS) Forward Continuous Current (Note 6) 250 mA I O Non-Repetitive Peak Forward Surge Current 8.3ms Single Half I 1.0 A FSM Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 150 mW P D Thermal Resistance, Junction to Ambient Air (Note 6) 667 C/W R JA Operating and Storage Temperature Range T , T -65 to +125 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Breakdown Voltage (Note 7) 40 V V I = 10A (BR)R R 0.35 I = 10mA F Forward Voltage Drop V 0.37 V I = 20mA F F 0.60 IF = 200mA 5 A V = 30V R Peak Reverse Current (Note 7) I R 1 A V = 10V R Total Capacitance C 50 pF V = 0V, f = 1.0MHz T R I = I = 200mA, F R Reverse Recovery Time t 10 ns RR IRR = 0.1 IR, RL = 100 Notes: 6. Device mounted on FR-4 board with recommended pad layout, which can be found at