NOT RECOMMENDED FOR NEW DESIGN USE SBR8M100P5 SDM8M100P5 Green 8A SURFACE MOUNT SCHOTTKY BARRIER DIODE PowerDI5 Product Summary ( T = +25C) Features and Benefits A Low Forward Voltage Drop V (V) I (A) V Max (V) I Max (A) RRM O F R Excellent High Temperature Stability 100 8 0.85 1.5 Soft, Fast Switching Capability +175C Operating Junction Temperature Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and Description and Applications manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. The SDM8M100P5 is a single rectifier packaged in PowerDI 5, NOT RECOMMENDED FOR NEW DESIGN USE SBR8M100P5 SDM8M100P5 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 100 V V RRM DC Blocking Voltage Average Rectified Output Current I 8 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 160 A FSM 210 mJ Non-Repetitive Avalanche Energy at IAS = 3.0A, L = 50mH EAS Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 20 C/W RJA Typical Thermal Resistance Junction to Case (Note 5) 3 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Test Condition Characteristic Symbol Min Typ Max Unit I = 4A, T = +25C 0.73 F J 0.78 0.85 I = 8A, T = +25C F J Forward Voltage Drop V V F 0.58 I = 4A, T = +125C F J 0.64 0.74 I = 8A, T = +125C F J 0.1 1.5 A V = 100V, T = +25C R J Leakage Current (Note 6) I R 0.15 2.0 mA V = 100V, T = +125C R J Junction Capacitance C 168 pF V = 4V, T = +25C J R J Notes: 5. 2-inch sq. Al board. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 SDM8M100P5 October 2019 Diodes Incorporated www.diodes.com Document number: DS38947 Rev. 4 - 3