NOT RECOMMENDED FOR NEW DESIGN USE HBS410 TT410 Green 4A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary ( T = +25C) Features and Benefits A Glass Passivated Die Construction V (V) I (A) V (V) I (A) RRM O F R Compact, Thin Profile Package Design 1000 4 1.0 5 Low Forward Voltage Drop Improves Power Efficiency High Current and Surge Capability Reliable Robust Construction Ideal for SMT Manufacturing Rated at 1000V PRV Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. TT410 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 1,000 V DC Blocking Voltage V R RMS Reverse Voltage V 700 V R(RMS) 4.0 A Average Rectified Output Current (Note 5) TA = +25C IO Non-Repetitive Peak Forward Surge Current, 8.3ms 120 A IFSM Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Peak Forward Surge Current, 1.0ms 240 A IFSM Single Half Sine-Wave Superimposed on Rated Load 2 2 2 I t Rating for Fusing (1ms < t < 8.3ms) I t 59 A S Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 5) 13 C/W RJA (Per Element) Typical Thermal Resistance, Junction to Lead (Per Element) RJL 8 C/W Typical Thermal Resistance, Junction to Case (Per Element) R 3 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1,000 Reverse Breakdown Voltage (Note 6) V V I = 10A (BR)R R 0.91 1.0 I = 2A, T = +25C F A Forward Voltage (Per Element) VF V 0.80 IF=2A, TA = +125C 0.15 5 VR = 1,000V, TA = +25C Leakage Current (Note 6) (Per Element) I A R 55 500 V = 1,000V, T = +125C R A 40 Total Capacitance (Per Element) C pF V = 4V, f = 1.0MHz T R Notes: 5. Device mounted on 15mmx12mmx1.6mm AL Pad attached on 100mmx75mmx27mm Fin heatsink. Thermal resistance test performed in accordance with JESD-51. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 TT410 April 2020 Diodes Incorporated www.diodes.com Document number: DS39107 Rev. 5 - 3 ADVANCED INFORMATION ADVANCED INFORMATION