US1DWF Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V Max (V) I Max (A) Low Profile, Small Form Factor Package RRM O F R Low Leakage Current 200 1 0.95 5 Glass Passivate Die Construction Enhanced Ultrafast Recovery Times for High Efficiency Description Low Forward Voltage, Low Power Loss Lead-Free Finish & RoHS Compliant (Notes 1 & 2) The US1DWF is a rectifier packaged in the SOD123F package and is Halogen and Antimony Free. Green Device (Note 3) suited as a boost diode in power factor correction circuitry. For use in Qualified to AEC-Q101 Standards for High Reliability secondary rectification and freewheeling for ultra-fast switching speed AC-AC and DC-DC converters in high-temperature conditions for consumer applications. Applications Mechanical Data Flat Panel Display Case: SOD123F Switching Power Supplies/Chargers Case Material: Molded Plastic, Green Molding Compound. LED Lighting UL Flammability Classification Rating 94V-0 Freewheeling Diode Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.016 grams (Approximate) SOD123F Schematic View Top View Ordering Information (Note 4) Part Number Qualification Case Packaging US1DWF-7 AEC-Q101 SOD123F 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See US1DWF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 200 V V RWM DC Blocking Voltage V R Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current I 30 A FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit 34 Typical Thermal Resistance Junction to Case R C/W JC 96 Typical Thermal Resistance Junction to Ambient (Note 5) R C/W JA 87 Typical Thermal Resistance Junction to Ambient (Note 6) R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 200 V I = 10A (BR)R R I = 1A, T = +25C 0.9 0.95 F J Forward Voltage V V F 0.8 I = 1A, T = +125C F J 0.1 5 V = 200V, T = +25C R J Reverse Leakage Current (Note 7) I A R 1.0 100 V = 200V, T = +125C R J Reverse Recovery Time t 30 35 ns I = 0.5A, I = 1.0A, I = 0.25A RR F R RR Typical Total Capacitance C 14 pF V = 4V, f=1MHz T R Notes: 5. Device mounted on FR-4 substrate, 25.4*25.4mm, 2oz, single-sided, PC boards with 2.1*2.1mm copper pad. 6. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 US1DWF May 2017 Diodes Incorporated www.diodes.com Document number: DS39222 Rev. 3 - 2 NEW PRODUCT