US1GWF Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V Max (V) I Max (A) Low Profile, Small Form Factor Package RRM O F R Very Low Leakage Current 400 1 1.25 1 Glass Passivate Die Construction Enhanced Ultrafast Recovery Times for High Efficiency Description Low Forward Voltage, Low Power Loss Lead-Free Finish & RoHS Compliant (Notes 1 & 2) The US1GWF is a rectifier packaged in the SOD123F (Standard) Halogen and Antimony Free. Green Device (Note 3) package and is suited as a boost diode in power factor correction Qualified to AEC-Q101 Standards for High Reliability circuitry. For use in secondary rectification and freewheeling for ultra- fast switching speed AC-AC and DC-DC converters in high- temperature conditions for consumer applications. Applications Mechanical Data Flat Panel Display Case: SOD123F (Standard) Switching Power Supplies/Chargers Case Material: Molded Plastic, Green Molding Compound. LED Lighting UL Flammability Classification Rating 94V-0 Freewheeling Diode Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.016 grams (Approximate) SOD123F (Standard) Schematic View Top View Ordering Information (Note 4) Part Number Qualification Case Packaging US1GWF-7 AEC-Q101 SOD123F (Standard) 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See US1GWF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage 400 V V RWM DC Blocking Voltage V R Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current I 30 A FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit 63 Typical Thermal Resistance Junction to Case (Note 6) R C/W JC 118 Typical Thermal Resistance Junction to Ambient (Note 5) R C/W JA 95 Typical Thermal Resistance Junction to Ambient (Note 6) C/W RJA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) 400 V V(BR)R IR = 10A 1.1 1.25 I = 1A, T = +25C F J Forward Voltage V V F 0.9 I = 1A, T = +125C F J 0.1 1 V = 400V, T = +25C R J Reverse Leakage Current (Note 7) I A R 2 10 V = 400V, T = +100C R J Reverse Recovery Time t 28 35 ns I = 0.5A, I = 1.0A, I = 0.25A RR F R RR Typical Total Capacitance C 9 pF T V = 4V, f=1MHz R Notes: 5. Device mounted on FR-4 substrate, 1 *1 , 2oz, single-sided, PC boards with 0.1 *0.15 copper pad. 6. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 US1GWF July 2017 Diodes Incorporated www.diodes.com Document number: DS38871 Rev. 3 - 2 NEW PRODUCT