US1JDF/US1MDF Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V Max (V) I Max (A) Glass Passivated Die Construction RRM O F R 600,1000 1 1.7 5 Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability Description Low Profile Design, Package Height Less than 1.1mm The US1JDF and US1MDF are rectifiers packaged in the low profile Lead-Free Finish RoHS Compliant (Notes 1 & 2) D-FLAT package. Providing ultra-fast recovery time for high Halogen and Antimony Free. Green Device (Note 3) efficiency, this device is ideal for use in general rectification applications. Mechanical Data Applications Case: D-FLAT Switching Mode Power Supply Case Material: Molded Plastic, Green Molding Compound. DC-DC Converter UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.035 grams (Approximate) D-FLAT Top View Ordering Information (Note 4) Part Number Qualification Case Packaging US1JDF-13 Commercial D-FLAT 10,000/Tape & Reel US1MDF-13 Commercial D-FLAT 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See US1JDF/US1MDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol US1JDF US1MDF Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 600 1,000 V RWM DC Blocking Voltage (Note 5) VR RMS Reverse Voltage 420 700 V V R(RMS) 1.0 A Average Rectified Output Current T = +25C I T O Non-Repetitive Peak Forward Surge Current 8.3ms 30 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 8) R 44 C/W JT Typical Thermal Resistance, Junction to Ambient (Note 8) 80 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol US1JDF US1MDF Unit Minimum Reverse Breakdown Voltage (Note 5) I = 5A V 600 1,000 V R (BR)R Maximum Forward Voltage Drop I = 1.0A V 1.7 V F F Peak Reverse Current T = +25C A 5.0 A I R 100 at Rated DC Blocking Voltage (Note 5) T = +100C A Maximum Reverse Recovery Time (Note 6) 75 ns t RR Typical Total Capacitance (Note 7) 10 pF C T Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Measured with I = 0.5A, I = 1.0A, I = 0.25A. See figure 7. F R RR 7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 8. Device mounted on FR-4 substrate, 1 * 1 , 2oz, single-sided, PC boards with 0.1 *0.15 copper pads. 9. Device mounted on FR-4 substrate, 0.4 * 0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pads. 1.20 10 T = 150C A 1 T = 125C A 1 0.80 Note 9 T = 100C A 0.60 T = 85C A Note 8 0.40 0.1 T = 25C A 0.20 T = -55C A 0 0.01 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 3.0 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Figure 2 Typical Forward Characteristics Figure 1 Forward Current Derating 2 of 5 US1JDF / US1MDF May 2016 Diodes Incorporated www.diodes.com Document number: DS36877 Rev. 9 - 2 I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F