US1JDFQ / US1MDFQ Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Product Summary ( T = +25C) Features and Benefits A Glass Passivated Die Construction V (V) I (A) V (V) I (A) RRM O F(MAX) R(MAX) Ultra-Fast Recovery Time for High Efficiency 600, 1000 1 1.7 5 Surge Overload Rating to 30A Peak High Current Capability Low Profile Design, Package Height Less than 1.1mm Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data The US1JDFQ and US1MDFQ are rectifiers packaged in the low Case: D-FLAT profile D-FLAT package. Providing ultra-fast recovery time for high Case Material: Molded Plastic, Green Molding Compound. UL efficiency, this device is ideal for use in applications such as: Flammability Classification Rating 94V-0 Reverse Protection Moisture Sensitivity: Level 1 per J-STD-020 Switching Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Blocking Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.035 grams (Approximate) D-FLAT Top View Ordering Information (Note 5) Part Number Qualification Case Packaging US1JDFQ-13 Automotive D-FLAT 10,000/Tape & Reel US1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See US1JDFQ / US1MDFQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol US1JDFQ US1MDFQ Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage 600 1000 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 420 700 V R(RMS) Average Rectified Output Current T = +25C I 1.0 A T O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 8) 44 C/W R JT Typical Thermal Resistance, Junction to Ambient (Note 8) 80 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol US1JDFQ US1MDFQ Unit 600 1000 V Minimum Reverse Breakdown Voltage (Note 6) IR = 5A V ( B R) R 1.7 V Maximum Forward Voltage Drop I = 1.0A V F F Peak Reverse Current T = +25C 5.0 A A I R 100 at Rated DC Blocking Voltage (Note 6) T = +100C A Maximum Reverse Recovery Time (Note 7) t 75 ns RR Typical Total Capacitance (Note 10) C 10 pF T Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Measured with I = 0.5A, I = 1.0A, I = 0.25A. See Figure 7. F R RR 8. Device mounted on FR-4 substrate, 1 * 1 , 2oz, single-sided, PC boards with 0.1 * 0.15 copper pads. 9. Device mounted on FR-4 substrate, 0.4 * 0.5 , 2oz, single-sided, PC boards with 0.2 * 0.25 copper pads. 10. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 1.20 10 T = 150C A 1 T = 125C A 1 0.80 Note 9 T = 100C A 0.60 T = 85C A Note 8 0.40 0.1 T = 25C A 0.20 T = -55C A 0 0.01 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 3.0 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Figure 1 Forward Current Derating Figure 2 Typical Forward Characteristics 2 of 5 US1JDFQ / US1MDFQ May 2016 Diodes Incorporated www.diodes.com Document number: DS38447 Rev. 2 - 2 NEW PRODUCT I , DC FORWARD CURRENT (A) F(DC) I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F