ZHCS500TA Diodes Incorporated

ZHCS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features High Current Capability (I = 500mA) F V (V) I (mA) V (mV) I (A) R F F(MAX) R(MAX) Low V F 40 500 550 40 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications PPAP Capable (Note 4) DC DC Converters Mobile Telecomms Mechanical Data PCMIA Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) SOT23 Cathode 1 Anode 3 NC 2 Top View Ordering Information (Note 5) Part Number Case Packaging ZHCS500TA SOT23 3000/Tape & Reel ZHCS500QTA SOT23 3000/Tape & Reel ZHCS500QTC SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZHCS500 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Continuous Reverse Voltage 40 V V R Continuous Forward Current 500 mA I F Forward Voltage I = 500mA V 550 mV F F Average Peak Forward Current D.C. = 50% I 1000 mA FAV 6.75 A t 100s Non Repetitive Forward Current I FSM t 10ms 3 A Thermal Characteristics Characteristic Symbol Value Unit 330 mW Power Dissipation, T = +25C P A D Junction Temperature 125 C T J Storage Temperature Range -55 to +150 C T STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V 40 60 V I = 200A (BR)R R 270 300 I = 50mA F 300 350 I = 100mA F 370 460 I = 250mA F 465 550 I = 500mA F Forward Voltage (Note 6) V mV F 550 670 I = 750mA F 640 780 I = 1A F 810 1050 I = 1.5A F 440 I = 500mA, T = +100C F A Reverse Current I 15 40 A V = 30V R R Diode Capacitance C 20 pF f = 1MHz, V = 25V D R Switched from I = 500mA to F Reverse Recovery Time 10 ns t I = 500mA RR R Measured I = 50mA R Notes: 6. Measured under pulsed conditions. Pulse width = 300S. Duty cycle = 2%. 2 of 5 ZHCS500 December 2018 Diodes Incorporated www.diodes.com Document number: DS33216 Rev. 7 - 2