ZLLS2000TA Diodes Incorporated

ZLLS2000 40V HIGH CURRENT LOW LEAKAGE SCHO TTKY DIODE Product Summary Features and Benefits Low Equivalent on Resistance V Max (V) I Max (A) F R V (V) I (A) RRM O Extremely Low Leakage +25C 30V +25C Low V , Fast Switching Schottky 40 2 0.54 40 F Package Thermally Rated to +150C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SOT26 A surface mount Schottky Barrier Diode featuring low forward voltage Case Material: Molded Plastic, Green Molding Compound drop suitable for high frequency rectification and reverse voltage UL Flammability Classification Rating 94V-0 protection. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe DC DC Converters (Lead-Free Plating) Solderable per MIL-STD-202, Method 208 Strobes Weight: 0.016 grams (Approximate) Mobile Phones Charging Circuits Motor Control SOT-26 C C C C A A Top View Top View Device Symbol Pin Out Ordering Information Device Packaging Shipping ZLLS2000TA SOT26 3,000/Tape & Reel ZLLS2000TC SOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZLLS2000 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Continuous Reverse Voltage 40 V V RRM Forward Current I 2.2 A F Peak Repetitive Forward Current I 3.55 A FPK Rectangular Pulse Duty Cycle Non Repetitive Forward Current t 100s 36 A I FSM t 10ms 12 A Thermal Characteristics Characteristic Symbol Value Unit - - Power Dissipation T = +25C A 1.1 W Single Die Continuous P D 1.71 W Single Die Measured at t < 5 secs Junction to Ambient (Note 5) R 113 C/W JA Junction to Ambient (Note 6) R 73 C/W JA Storage Temperature Range T -55 to +150 C STG Junction Temperature T +150 C J Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device mounted on FR-B PCB measured at t < 5secs. 120 O 1.2 T =25 C AMB 100 Rectangular Pulse 1.0 80 0.8 D=0.5 60 0.6 40 0.4 D=0.2 Single Pulse 20 D=0.05 0.2 D=0.1 0.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160 O Pulse Width (s) Temperature ( C) Transient Thermal Impedance Derating Curve Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V 40 - - V I = 1mA (BR)R R - 285 - I = 50mA F - 305 - IF = 100mA - 335 - I = 250mA F - 365 390 I = 500mA F Forward Voltage (Note 7) - 403 430 mV V I = 1A F F - 433 490 I = 1.5A F - 461 540 I = 2A F - 509 600 I = 3A F - 450 - I = 2A,T = +100C F A - 10 40 A V = 30V R Reverse Current I R - 0.6 - mA V = 30V, T = +85C R A Diode Capacitance - 65 - pF C f = 1MHz, V = 30V D R Switched from I = 500mA to V = 5.5V F R Reverse Recovery Time tRR - 6 - ns Measured I 50mA. di /dt = 500mA/ ns. R Reverse Recovery Charge Q - 685 - nC RR RSOURCE = 6 RLOAD = 10 Note: 7. Measured under pulsed conditions. Pulse width = 300s. Duty cycle < 2%. 2 of 5 ZLLS2000 July 2016 Diodes Incorporated www.diodes.com Document number DS32060 Rev. 7 2 O Thermal Resistance ( C/W) Max Power Dissipation (W)