ZLLS350TA Diodes Incorporated

A Product Line of Diodes Incorporated ZLLS350 40V LOW LEAKAGE SCHOTTKY DIODE Description Mechanical Data Packaged in the SOD523 package offering an ideal low V /I Case: SOD523 F R performance combined with a low package height making the device Case Material: Molded Plastic,Gree Molding Compound. suitable for various converter, charger and LED driver circuits. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: Cathode Band Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Features Low V F 380mA continuous current rating Low profile SOD523 package Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOD523 Cathode Anode Top View Top View Pin-Out Ordering Information (Note 4) Part Number Case Packaging ZLLS350TA SOD523 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZLLS350 Maximum Ratings T = 25C unless otherwise specified A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit DC Blocking Voltage 40 V V RM Continuous Forward current 380 mA I F Average Peak Forward Current duty cycle = 50% I 650 mA FAV Non-Repetitive Forward Current t < 100s 6.0 I A FSM t < 10ms 1.3 Power Dissipation at T = +25C (Note 5) P 357 mW A D Power Dissipation at T = +25C (Note 6) P 413 mW A D Operating and storage temperature range T -55 to +150 C STG Junction Temperature +150 C T J Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance Junction to Ambient (Note 5) R 350 JA C/W Thermal Resistance Junction to Ambient (Note 6) 303 R JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition Reverse Breakdown Voltage V 40 53 V I = 100 A (BR)R R 395 450 I = 30mA F 430 520 I = 50mA F Forward Voltage Drop (Note 7) mV V F 490 635 I = 100mA F 650 1000 I = 275mA F Leakage Current 0.15 4 A I V = 30V R R Total Capacitance 2.5 6 C f = 1MHz V = 30V T R Switch from I = 100mA to F Reverse Recovery Time t 1 nS I = 100mA. rr R Measured at I = 10mA R Notes: 5. For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions 6. As above measured t < 5 seconds 7. Measured under pulsed conditions. Pulse width 300s duty cycle 2% 2 of 4 December 2013 ZLLS350 Diodes Incorporated www.diodes.com Document Number: DS33225 Rev. 6 - 2