ZLLS500QTA SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features and Benefits V Max (V) I Max (A) Extremely Low Leakage (10A 30V) F R V (V) I (mA) R F +25C +25C High Current Capability (I = 0.7A) F 40V 0.75A 0.63 10 Low V , Fast Switching Schottky F ZLLS500 Complements Low Temperature Equivalent ZHCS500 Package Thermally Rated to +150C Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This compact SOT23-packaged Schottky diode offers users an Halogen and Antimony Free. Green Device (Note 3) excellent performance combination comprising high current operation, Qualified to AEC-Q101 Standards for High Reliability extremely low leakage and low forward voltage ensuring suitability for PPAP Capable (Note 4) applications requiring efficient operation at higher temperatures (above +85C). See Operational Efficiency chart on Page 3. Mechanical Data Applications Case: SOT23 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. Strobes UL Flammability Classification Rating 94V-0 Mobile Telecommunication Moisture Sensitivity: Level 1 per J-STD-020 Charging Circuits Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) SOT23 C 1 1 3 2 3 A N/C Device Schematic Top View Top View Pin Configuration Ordering Information (Note 5) Device Compliance Packaging Shipping ZLLS500QTA Automotive SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZLLS500QTA Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Continuous Reverse Voltage 40 V VR Continuous Forward Current 0.7 A I F Peak Repetitive Forward Current 1.14 A I FPK Rectangular Pulse Duty Cycle t 100s 13 A Non Repetitive Forward Current I FSM t 10ms 3.2 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation, T = +25C A Single Die Continuous P 500 mW D Single Die Measured at t < 5 seconds 630 (Note 6) 250 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 198 Junction Temperature 150 C T J Storage Temperature Range -55 to +150 C T STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V 40 V I = 200A (BR)R R 305 360 I = 50mA F 335 390 I = 100mA F 395 450 I = 250mA F 465 530 I = 500mA F Forward Voltage (Note 8) V mV F 550 630 I = 750mA F 620 710 I = 1A F 710 800 I = 1.5A F 415 I = 500mA, T = +100C F A 6 10 V = 30V R Reverse Current A I R 370 V = 30V, T = +85C R A Diode Capacitance C 16 pF f = 1MHz, V = 30V D R Switched from I = 500mA to F Reverse Recovery Time 3 ns t RR V = 5.5V Measured I = 50mA R R di /dt = 500mA/ns Reverse Recovery Charge Q 210 pC RR R = 6 R = 10 SOURCE LOAD Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. For a device surface mounted on FR4 PCB measured at t < 5 seconds. 8. Measured under pulsed conditions. Pulse width = 300S. Duty cycle 2%. 2 of 6 ZLLS500QTA December 2015 Diodes Incorporated www.diodes.com Document number: DS38442 Rev. 1 - 2