ZR40401F41TA Diodes Incorporated

A Product Line of Diodes Incorporated ZR4040-4.1 PRECISION 4.1 VOLT MICROPOWER VOLTAGE REFERENCE Description Pin Assignments The ZR4040-4.1 uses a bandgap circuit design to achieve a SOT23 Package Suffix - F precision micropower voltage reference of 4.1 volts. The device is available in a small outline surface mount package, ideal for applications where space saving is important, as well as packages for through hole requirements. The ZR4040-4.1 design provides a stable voltage without an external capacitor and is stable with capacitive loads. The ZR4040-4.1 is recommended for operation between 60 A and 15mA and so is ideally suited to low power and battery powered applications. (Top View) Excellent performance is maintained to an absolute Pin 1 floating or connected to pin 2 maximum of 25mA, however the rugged design and 20 volt processing allows the reference to withstand transient effects and currents up to 200mA. Superior switching E-Line, 3 pin, Rev Package Suffix R capability allows the device to reach stable operating conditions in only a few microseconds. Features OBSOLETE Small outline SOT23 package No stabilizing capacitor required Typical T 20ppm/C C (Bottom View) Typical slope resistance 0.55 Pin 3 floating or connected to pin 1 2% and 1% tolerance Industrial temperature range Operating current 60A to 15mA Green molding compound (No Br, Sb) Applications Typical Application Circuit Battery powered and portable equipment. Metering and measurement systems. Instrumentation. Test equipment. Data acquisition systems. Precision power supplies. Crystal oscillators. 1 of 5 June 2010 ZR4040-4.1 Diodes Incorporated www.diodes.com Document number: DS32171 Rev. 5 - 2 A Product Line of Diodes Incorporated ZR4040-4.1 Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Rating Unit Reverse Current 25 mA Forward Current 25 mA Operating Temperature -40 to 85 C Storage Temperature -55 to 125 C Power Dissipation (T = 25C) AMB 330 mW SOT23 Electrical Characteristics (Test conditions: T = 25C, unless otherwise specified.) amb Symbol Parameter Condition Min. Typ. Max. Tol. (%) Unit 4.05 4.096 4.14 1 V Reverse breakdown voltage I = 150A V R R 4.01 4.096 4.18 2 I Minimum operating current 25 60 A MIN Recommended operating current 0.06 15 mA I R Average reverse breakdown voltage (*) 20 100 ppm/C T I to C R(MIN) temperature coefficient () I R(MAX) Slope resistance 0.55 2 R S I = 1mA R Reverse dynamic impedance f = 100Hz 0.4 1.2 Z R I = 0.1I AC R I = 1mA R Wideband noise voltage 90 V(rms) E f = 10Hz to N 10kHz Notes: (V V ) x 1000000 (*) R(MAX) R(MIN) T = C V x (T T ) R (MAX) (MIN) Note: V - V is the maximum deviation in reference R(MAX) R(MIN) voltage measured over the full operating temperature range. V Change ( to I ) () R IR(MIN) R(MAX) R = S I I ) R(MAX) R(MIN) . 2 of 5 June 2010 ZR4040-4.1 Diodes Incorporated www.diodes.com Document number: DS32171 Rev. 5 - 2