A Product Line of Diodes Incorporated ZXGD3006E6 40V 10A GATE DRIVER IN SOT26 Description Features ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC High-gain buffer with typically 4A output from 1mA input MOSFETs. It can transfer up to 10A peak source/sink current into the 40V supply for +20V to -18V gate driving to prevent dV/dt gate for effective charging and discharging of a large capacitive load. induced false triggering Emitter-follower that is rugged to latch-up / shoot-through The ZXGD3006E6 can drive typically 4A into the low gate impedance issues, and delivers <10ns propagation delay time of an IGBT, with just 1mA input from a controller. Also, the turn-on Separate source and sink outputs for independent control of and turn-off switching behavior of the IGBT can be individually tailored IGBT turn-on and turn-off times to suit an application. In particular, by defining the switching Optimized pin-out to simplify PCB layout and reduce parasitic characteristics appropriately, EMI and cross conduction problems can trace inductances be reduced. Near-zero quiescent supply current Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Applications Halogen and Antimony free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Gate driving IGBTs and SiC MOSFETs in: PPAP capable (Note 4) DC-DC Converters in Electric Cars Automotive Active Suspension Systems Mechanical Data Solar Inverters Case: SOT26 Power Supplies Case material: molded plastic. Green molding compound. Plasma Display Panel Power Modules UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 SOT26 Weight: 0.018 grams (approximate) Pin Name Pin Function V V Supply Voltage High Source CC CC IN Driver Input Pin IN Do Not Connect V Supply Voltage Low EE SOURCE Source Current Output V Sink EE SINK Sink Current Output Top View Internal Device Top View Schematic Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXGD3006E6TA AEC-Q101 3006 7 8 3,000 ZXGD3006E6QTA Automotive 3006 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXGD3006E6 Typical Application Circuit V S V CC + supply V CC R SOURCE SOURCE IGBT IN (or SiC MOSFET) ZXGD3006 SINK R SINK V EE V EE - supply Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Supply voltage, with respect to V V 40 V EE CC 40 V Input voltage, with respect to V V EE IN Output difference voltage (Source Sink) 7.5 V V (source-sink) Peak output current 10 A I PK Input current I 100 mA IN Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Notes 6 & 7) 1.1 W P D Linear derating factor 8.8 mW/C Thermal Resistance, Junction to Ambient (Notes 6 & 7) R 113 JA C/W Thermal Resistance, Junction to Lead (Note 8) R 105 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 1,500 V 1C Electrostatic Discharge Charged Device Model ESD CDM 1,000 V IV Notes: 6. For a device mounted on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. The heatsink is split in half with the pin 1 (V ) and pin 3 (V ) connected separately to each half. CC EE 7. For device with two active die running at equal power. 8. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V ) and pin 3 (V ). CC EE 9. Refer to JEDEC specification JESD22-A114 and JESD22-C101. 2 of 8 June 2013 ZXGD3006E6 Diodes Incorporated www.diodes.com Document Number DS35229 Rev. 4 - 2 Controller