ZXRE4041DR Diodes Incorporated

A Product Line of Diodes Incorporated ZXRE4041 SOT23 MICROPOWER 1.225V VOLTAGE REFERENCE Description Pin Assignments The ZXRE4041 is a bandgap circuit designed to achieve a precision micropower voltage reference of 1.225 volts. The device is available in the small outline SOT23 surface mount package which is ideal for applications where space saving is important. SOT23 tolerance is available to 0.5% C grade for precision applications. Excellent performance is maintained over the 30 A to 12mA operating current range with a typical temperature coefficient of only 20ppm/C. The device has (Top view) been designed to be highly tolerant of capacitive loads so Pin 1 floating or connected to pin 2 maintaining excellent stability. This device offers a SOT23 pin for pin compatible alternative to LM4041 voltage references. Features Schematic Diagram High performance alternative to LM4041 Small outline SOT23 30A knee current 20ppm/C typical temperature coefficient Unconditionally stable 0.5%, 1%, and 2% tolerance Green molding compound (No Br, Sb) Applications Battery powered equipment Precision power supplies Portable instrumentation Portable communication devices Application Circuit Notebook and palm top computers Data acquisition systems A/D and D/A converters Test equipment 1 of 5 May 2010 ZXRE4041 Diodes Incorporated www.diodes.com Document number: DS32169 Rev. 6 - 2 A Product Line of Diodes Incorporated ZXRE4041 Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Symbol Rating Unit Reverse Current V 30 mA Z Forward Current 10 mA Operating Temperature T -40 to 125 C OMP Storage Temperature T -55 to 125 C STG P 330 mW Power Dissipation (T = 25C) D AMB Electrical Characteristics (Test conditions: T = 25C, unless otherwise specified.) amb Symbol Parameter Condition Min. Typ. Max. Tol. (%) Unit 1.219 1.225 1.231 C/0.5 Reverse breakdown voltage V V I = 100A R R 1.213 1.225 1.237 D/1 Minimum operating current 30 A I MIN I Recommended operating current 0.03 12 mA R Average reverse breakdown (*) T I to I 20 100 ppm/C R(min) R(max) C voltage temperature coefficient Reverse Breakdown Change 1 () I = 30A to 1A R mV R S with Current Voltage I = 1mA to 12mA 10 R I = 1mA R Reverse dynamic impedance f = 100Hz 0.2 0.6 Z R I = 0.1I AC R I = 8A to 100A R Wideband noise voltage 60 V(rms) E N f = 10Hz to 10kHz Notes: (V V ) x 1000000 (*) R(MAX) R(MIN) T = C V x (T T ) R (MAX) (MIN) Note: V - V is the maximum deviation in reference R(MAX) R(MIN) voltage measured over the full operating temperature range. V () R R = S I R 2 of 5 May 2010 ZXRE4041 Diodes Incorporated www.diodes.com Document number: DS32169 Rev. 6 - 2