BAS40 / -04 / -05 / -06
SMD Schottky Barrier Diode
200mW, Low VF,
Small Signal Diode
SOT-23
F
A
C
Features
B
Metal-on-silicon Shcottky Barrier E
Surface device type mounting
Moisture sensitivity level 1
G
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix on
packing code and prefix on date code
Unit (mm) Unit (inch)
Dimensions
Mechanical Data Min Max Min Max
Case : Flat lead SOT 23 small outline plastic package A 2.80 3.00 0.110 0.118
B 1.20 1.40 0.047 0.055
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
C 0.30 0.50 0.012 0.020
High temperature soldering guaranteed: 260C/10s D 1.80 2.00 0.071 0.079
Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100
Marking Code : 43.44.45.46
F 0.90 1.20 0.035 0.043
G 0.550 REF 0.022 REF
BAS40 BAS40-04 BAS40-05 BAS40-06
Maximum Ratings and Electrical Characteristics
Rating at 25C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Symbol Value Units
Power Dissipation PD 200 mW
Repetitive Peak Reverse Voltage VRRM 40 V
Reverse Voltage VR 40 V
Repetitive Peak Forward Current IFRM 200 mA
Mean Forward Current IO 200 mA
Non-Repetitive Peak Forward Surge Current (Note 1) IFSM 0.6 A
Thermal Resistance (Junction to Ambient) (Note 2) RJA 357 C/W
Junction and Storage Temperature Range TJ, TSTG -65 to + 125 C
Electrical Characteristics
Type Number Symbol Min Max Units
V(BR) 40 - V
Reverse Breakdown Voltage IR= 10 A
- 0.38
IF= 1mA
VF V
IF= 10mA - 0.50
Forward Voltage
IF= 40mA
- 1.00
IR - 0.2 A
Reverse Leakage Current VR= 30V
CJ - 5 pF
Junction Capacitance VR=1V, f=1.0MHz
Trr - 5.0 ns
Reverse Recovery Time IF =IR=10mA,RL=100 ,IRR=1mA
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : D11 BAS40 / -04 / -05 / -06
200mW, Low VF, SMD Schottky Barrier Diode
Small Signal Diode
Rating and Sharacteristic Curves ( BAS40 / -04 / -05 / -06 )
FIG.2- MAXIMUM NON-REPETITIVE PEAK
FIG.1- POWER DERATING CURVE
FORWARD SURGE CURRENT PER LEG
600
8.3ms Single Half Sine Wave
200
(JEDEC Method)
300
100
0
0
1 2 5 10 20 50 100
0 25 50 75 100 125
NUMBER OF CYCLES AT 60Hz
T , AMBIENT TEMPERATURE ( C)
A
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1
10000
0
T = 125 C
A
1000
0.1
0
T = 70 C
A
0
T = -40 C
A
100
0
T=0C
A
0.01
0
T = 25 C
A
0
T = 25 C
A
10
0
0
T = 70 C
A T=0C
A
0.001
0
1
T = -40 C
0 A
T = 125 C
A
0.0001
0.1
1.0
00.2 0.4 0.6 1.2
0.8 0
10 20 30 40
T , INSTANTANEOUS FORWARD VOLTAGE (mV)
j V , REVERSE VOLTAGE. (V)
R
FIG.5- TYPICAL TOTAL CAPACITANCE VS
FIG.6- TYPICAL TRANSIENT THERMAL
REVERSE VOLTAGE
CHARACTERISTICS
100
f = 1.0MHz
4.0
10
2.0
1
0.1
0
0.01 0.1 1
0 5 10 15 20 10 100
PULSE DURATION. (sec)
REVERSE VOLTAGE
Version : D11
P , POWER DISSIPATION (mW)
JUNCTION CAPACITANCE (pF) INSTANTANEOUS FORWARD CURRENT (mA)
D
PEAK FORWARD SURGE CURRENT. (mA)
I, INSTANTANEOUS REVERSE CURRENT. ( nnA)
O
R
TRANSIENT THERMAL IMPEDANCE. ( C/W)