BYP25A4

BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6 BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6 Silicon-Press-Fit-Diodes High Temperature Diodes Silizium-Einpress-Dioden Hochtemperatur-Dioden Version 2014-08-18 Nominal Current 25 A 12.75 Nennstrom 0.5 11 Repetitive peak reverse voltage 50 ... 600 V Periodische Spitzensperrspannung Metal press-fit case with plastic cover Metall-Einpressgehuse mit Plastik-Abdeckung 1.3 Weight approx. 10 g Gewicht ca. Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Dimensions - Mae mm Maximum ratings Grenzwerte Type / Typ Repetive peak reverse voltage Surge peak reverse voltage Wire to / Draht an Periodische Spitzensperrspannung Stospitzensperrspannung V V V V RRM RSM Anode Cathode BYP25A05 BYP25K05 50 60 BYP25A1 BYP25K1 100 120 BYP25A2 BYP25K2 200 240 BYP25A3 BYP25K3 300 360 BYP25A4 BYP25K4 400 480 BYP25A6 BYP25K6 600 700 Max. average forward rectified current, R-load T = 150C I 25 A C FAV Dauergrenzstrom in Einwegschaltung mit R-Last 1 Repetitive peak forward current f > 15 Hz I 90 A ) FRM Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave T = 25C I 270/300 A A FSM Stostrom fr eine 50/60 Hz Sinus-Halbwelle 2 2 Rating for fusing, t < 10 ms T = 25C i t 375 A s A Grenzlastintegral, t < 10 ms Operating junction temperature Sperrschichttemperatur T -50...+215C j Storage temperature Lagerungstemperatur T -50...+215C S 1 Max. case temperature TC = 150C Max. Gehusetemperatur TC = 150C Diotec Semiconductor AG BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6 Characteristics Kennwerte Forward Voltage T = 25C I = 25 A V < 1.1 V j F F Durchlass-Spannung Leakage Current T = 25C V = V I < 100 A j R RRM R Sperrstrom Thermal Resistance Junction Case R < 1 K/W thC Wrmewiderstand Sperrschicht Gehuse Maximum pressing force F 4 kN pmax Maximaler Einpressdruck 3 120 10 % A 100 T = 125C j 2 10 80 T = 25C j 10 60 40 1 20 I F I FAV 270a-(25a-1,1v) -1 10 0 0.4 V 0.8 1.0 1.2 1.4 V 1.8 0 T 50 100 150 200 C F C Rated forward current versus case temperature Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Zul. Richtstrom in Abh. von der Gehusetemp. 3 10 A 2 10 F 10 2 3 1 10 10 n 10 Peak forward surge current versus number of cycles at 50 Hz Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz Diotec Semiconductor AG