PST1600M Diotec

PST1600A ... PST1600M PST1600A ... PST1600M Silicon Rectifier Diodes Half Bridge Silizium-Gleichrichterdioden Halbbrcke Version 2013-05-07 Nominal current 16 A Nennstrom 0.3 10.1 0.2 1.2 Repetitive peak reverse voltage 50...1000 V 0.2 4 3.8 Periodische Spitzensperrspannung 4 0.2 4.5 Plastic case TO-220AB Type Typ Kunststoffgehuse 1 2 3 Weight approx. 1.8 g 0.2 Gewicht ca. 2.67 0.1 1 2 3 1.3 0.1 Plastic material has UL classification 94V-0 0.42 0.2 0.8 Gehusematerial UL94V-0 klassifiziert 0.1 2.54 Standard packaging in tubes Dimensions - Mae [mm] Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Repetitive peak reverse voltage Surge peak reverse voltage Forward voltage Typ Periodische Spitzensperrspannung Stospitzensperrspannung Durchlass-Spannung 1 1 1 V [V] ) V [V] ) V [V] ), T = 25C RRM RSM F j I = 5 A I = 8 A F F PST1600A 50 50 < 1.0 < 1.1 PST1600B 100 100 < 1.0 < 1.1 PST1600D 200 200 < 1.0 < 1.1 PST1600G 400 400 < 1.0 < 1.1 PST1600J 600 600 < 1.0 < 1.1 PST1600K 800 800 < 1.0 < 1.1 PST1600M 1000 1000 < 1.0 < 1.1 1 Max. average forward current, R-load T = 100C I 8 A ) C FAV 2 Dauergrenzstrom mit R-Last T = 100C I 16 A ) C FAV 3 Repetitive peak forward current f > 15 Hz I 30 A ) FRM Periodischer Spitzenstrom 1 Peak forward surge current, 50/60 Hz half sine-wave T = 25C I 135/150 A ) A FSM Stostrom fr eine 50/60 Hz Sinus-Halbwelle 2 2 1 Rating for fusing, t < 10 ms T = 25C i t 90 A s ) A Grenzlastintegral, t < 10 ms Junction temperature Sperrschichttemperatur -50...+150C T j Storage temperature Lagerungstemperatur -50...+175C T S 1 Per diode Pro Diode 2 Output current when operating two devices in a full bridge configuration Ausgangstrom bei Betrieb zweier Bauteile als Vollbrcke 3 Max. temperature of the case TC = 100C Max. Temperatur des Gehuses TC = 100C Diotec Semiconductor AG PST1600A ... PST1600M Characteristics Kennwerte Leakage current T = 25C V = V I < 5 A j R RRM R Sperrstrom 1 Thermal resistance junction to case R < 2.5 K/W ) thC Wrmewiderstand Sperrschicht Gehuse 2 10 120 [%] [A] 100 10 80 T = 125C j T = 25C j 1 60 40 -1 10 20 I F I FAV 200a-(5a-0.95v) -2 10 0 0.4 V 0.8 1.0 1.2 1.4 [V] 1.8 0 T 50 100 150 [C] F C Rated forward current vs. temp. of the case Forward characteristics (typical values) Zul. Richtstrom in Abh. v. d. Gehusetemperatur Durchlasskennlinien (typische Werte) 1 Per diode Pro Diode 2