DCR850G26 Dynex

DCR850G26 Phase Control Thyristor DS6040-1 April 2011 (LN28251) KEY PARAMETERS FEATURES V 2600 V DRM Double Side Cooling I 850 A T(AV) High Surge Capability I 11000 A TSM dV/dt* 1000 V/s dI/dt 200 A/s * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Repetitive Peak Conditions Ordering Voltages Number V and V DRM RRM V DCR850G26 2600 T = -40C to 125C, vj DCR850G24 2400 I = I = 60mA, DRM RRM DCR850G22 2200 V , V t = 10ms, DRM RRM p DCR850G20 2000 V & V = DSM RSM V & V +100V DRM RRM Outline type code: G respectively (See Package Details for further information) Lower voltage grades available. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR850G26 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR850G26 SEMICONDUCTOR CURRENT RATINGS T = 60C unless stated otherwise case Symbol Parameter Test Conditions Max. Units Double Side Cooled I Mean on-state current Half wave resistive load 850 A T(AV) I RMS value - 1330 A T(RMS) I Continuous (direct) on-state current - 1200 A T SURGE RATINGS Symbol Parameter Test Conditions Max. Units I Surge (non-repetitive) on-state current 10ms half sine, T = 125C 11.0 kA TSM case 2 2 2 I t I t for fusing V = 0 0.605 MA s R THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units R Thermal resistance junction to case Double side cooled DC - 0.035 C/W th(j-c) R Thermal resistance case to heatsink Double side cooled DC - 0.008 C/W th(c-h) T Virtual junction temperature Blocking V / - 125 C vj DRM VRRM T Storage temperature range -40 140 C stg F Clamping force 12 18 kN m 2/9 www.dynexsemi.com