5962-9217601MSA(E2VNSC) E2v

5962-9217601MSA(E2VNSC) electronic component of E2v Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 5962-9217601MSA(E2VNSC) across the USA, India, Europe, Australia, and various other global locations. 5962-9217601MSA(E2VNSC) are a product manufactured by E2v. We provide cost-effective solutions for 5962-9217601MSA(E2VNSC), ensuring timely deliveries around the world.

Part No. 5962-9217601MSA(E2VNSC)
Manufacturer: E2v
Category: Unclassified
Description: E2V OWNED NSC FG
12-Way, SMD, 12V, Quad SPDT, Low Profile, Signal Relay.
Datasheet:
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1053.2886
25$ 711.6837
N/A

   
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We are delighted to provide the 5962-9217601MSA(E2VNSC) from our E2v manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 5962-9217601MSA(E2VNSC) and other electronic components in the E2v manufacturer and beyond.

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1. 5962-9217601MSA is a military standard approved semiconductor device, manufactured by E2v. 2. It is a Silicon Avalanche Photodiode (Si-APD) with a spectral response extending from 420nm to 1100nm. 3. The device is housed in a metal header package with a lead pitch of 0.120 in. 4. The specific device is designed for operation with minimum input capacitance of 15pF and minimum peak responsivity of 0.2A/W at 420nm. 5. The device has a maximum dark current of 1nA and a maximum voltage breakdown of 40V.

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