INCH-POUND MIL-M-38510/1F 16 March 2005 SUPERSEDING MIL-M-38510/1E 1 June 1982 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, NAND GATES, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, TTL, positive NAND logic gating microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.3). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit 01 Single, 8-input positive NAND gate 02 Dual, 4-input positive NAND gate 03 Triple, 3-input positive NAND gate 04 Quadruple, 2-input positive NAND gate 05 Hex, 1-input inverter gate 06 Triple, 3-input positive NAND gate (open collector output) 07 Quadruple, 2-input positive NAND gate (open collector output) 08 Hex, 1-input inverter gate (open collector output) 09 Same as device type 07, except different pin connections 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style A GDFP5-F14 or CDFP6-F14 14 Flat B GDFP4-F14 14 Flat C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAS, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to bipolar dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-M-38510/1F 1.3 Absolute maximum ratings. Supply voltage range ..............................................................................-0.5 V to +7.0 V Input voltage range .................................................................................-1.5 V at -12 mA to +5.5 V Storage temperature range .................................................................... -65 to +150C Maximum power dissipation per gate (P ) 1/.......................................... 40 mW D Lead temperature (soldering, 10 seconds) ............................................. 300C Thermal resistance, junction to case ( ) ............................................. (See MIL-STD-1835) JC Junction temperature (T ) 2/................................................................... 175C J 1.4 Recommended operating conditions. Supply voltage........................................................................................ +4.5 V minimum to +5.5 V maximum Minimum high level input voltage .......................................................... +2.0 V Maximum low level input voltage (V ) ................................................... +0.8 V IL Normalized fanout (each output) 3/ ........................................................ 10 maximum Case operating temperature range ......................................................... -55 to +125C 1/ Must withstand the added P due to short-circuit test (e.g., I ). D OS 2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535. 3/ Device will fanout in both high and low levels to the specified number of inputs of the same device type as that being tested. 2