INCH-POUND MIL-M-38510/209H 21 April 2014 SUPERSEDING MIL-M-38510/209G 13 September 2013 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 8192-BIT, SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON Inactive for new design after 24 July 1995 This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4). 1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit Access time (ns) 01 2048 word / 4 bits per word PROM with uncommitted collector 125 2048 word / 4 bits per word PROM with active pullup and a third high- 02, 08, 10 125, 90, 55 impedance state output 03 1024 word / 8 bits per word PROM with uncommitted collector 90 1024 word / 8 bits per word PROM with active pullup and a third high- 04, 09 90, 55 impedance state output 1024 word / 8 bits per word PROM with active pullup and a third high- 05 90 impedance state output 06 1024 word / 8 bits per word PROM with uncommitted collector 90 NOTE: Device type 07 was deleted from this document under revision D. 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DLA Land and Maritime-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to memory dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-M-38510/209H 1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack V GDIP1-T18 or CDIP2-T18 18 Dual-in-line X See figure 1 18 Flat pack Y GDFP2-F18 18 Flat pack 1.3 Absolute maximum ratings. Supply voltage range .................................................................... -0.5 V to +7.0 V Input voltage range ....................................................................... -1.5 V at -10 mA to +5.5 V Storage temperature range ........................................................... -65 C to +150 C Lead temperature (soldering, 10 seconds) .................................... +300 C Thermal resistance, junction to case ( ) : JC Cases J, K, V, and Y ............................................................... See MIL-STD-1835 1/ Case X .................................................................................... 35 C/W maximum 1/ Output voltage ............................................................................... -0.5 V to +V CC Output sink current ........................................................................ 100 mA Maximum power dissipation (P ) : D Device types 01, 02, 08, and 10 .............................................. 950 mW 2/ Device types 03, 04, 05, 06, and 09 ........................................ 1.1 W 2/ Maximum junction temperature (T ) .............................................. +175 C J 1.4 Recommended operating conditions. Supply voltage range .................................................................... +4.5 V dc minimum to +5.5 V dc maximum Minimum high-level input voltage (V ) ......................................... 2.0 V IH Maximum low-level input voltage (V ) .......................................... 0.8 V IL Normalized fanout (each output) : Device types 01, 02, 08, and 10 ............................................. 12 mA 3/ Device types 03, 04, 05, 06, and 09 ....................................... 8 mA 3/ Case operating temperature range (T ) ........................................ -55 C to +125 C C 1/ Heat sinking is recommended to reduce the junction temperature. 2/ Must withstand the added P due to short circuit test (e.g. I ). D OS 3/ 16 mA for circuits B, D, and F devices. 2 Source: