E931.97A37HB Elmos

MOS (PTY) LTD. Microsystems On Silicon Member of ELMOS Semiconductor AG PIR CONTROLLER INTEGRATED CIRCUIT E931.97 PRELIMINARY INFORMATION - JUL 28, 2011 General Description Features Digital signal processing The E931.97 integrated circuit combines all required On chip supply shunt regulator functions for a single chip Passive Infra Red (PIR) motion Low power consumption detector. Motion detection is signaled through the push- Differential PIR sensor input pull REL output. A digital input OEN enables REL output. Excellent power supply rejection A LED output indicates whenever the PIR Signal is above Insensitive to RF interference the selected threshold. The E931.97 interfaces directly Inputs for sensitivity, on time and daylight sensor with up to two conventional PIR sensors via a high im- Outputs for relay and LED pedance differential input. The PIR signal is converted to Instantaneous settling after power up a 15 bit digital value on chip. The parameters for sensitiv- ity and timing are set by connecting the corresponding inputs to DC voltages. The voltage levels on the inputs Applications are converted to digital values with 7 bit resolution. All PIR motion detection signal processing is performed digitally. The E931.97 is Intruder detection available in TSSOP-14 and SOIC14 packages. Occupancy detection Motion sensor lights 12V R1 CON2 D1 D2 R6 1 RE1A 3.3V 2 + C1 C2 U1 Q1 R5 L1 14 1 ENVREG VDD V1 9 7 VDD OEN PIR1 CON1 2 2 REL C3 Q2 1 R4 11 3 PIRIN LED 12 6 NPIRIN SENS R2 R3 5 ONTIME 13 4 VSS VSS T931.97-TSSOP-14 VSS Typical application circuit for Wired Alarm Systems Comp T yp. Value Function Note U1 E 931.97 PIR Controller IC TSSOP-14 or SOIC-14 PIR1 L HI878 Dual Element PIR Sensor TO-5 R1 1 0k S eries voltage drop resistor R1 < (VSupply-0.6-VReg)/(IIDD+ILED/ Q2+IREL/ Q1) R2 100k Pull down resistor R3 2 .2M Pull down resistor R4 2 2k B ase current setting resistor R4 = (VSupply-0.6- VLED)/( ILED/ Q2) R5 2 2k B ase current setting resistor R5 = (V -V )/(I / ) Reg Q1BE REL Q1 R6 1 .2k LED drive current limiting resistor R6 = (V -0.6- V )/( I ) Supply LED LED C1 10uF/6V P ower supply storage capacitor C2 100nF Vdd-Vss Supply bypass capacitor C3 470nF PIR signal bypass capacitor RE1 TAA1A12F00 N .O. REL Active if no movement is detected V1 S MBJ-12 T ransorb, voltage spike protection Q1,Q2 BC849B NPN transistors for LED & REL drive D1 1 N4007 Supply R everse c onnection protector diode D2 1 N4148 Fly back protection diode L1 LED Table 1: Component Values for simple intruder detector (V = 12V) Supply This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0070E.00 1/7 PIR CONTROLLER INTEGRATED CIRCUIT E931.97 PRELIMINARY INFORMATION - JUL 28, 2011 Mains Powered Motion Sensor Light Application Circuit VREL RE1A R3 D2 D1 VDD L1 N.O. S1 On + R2 RV1 C3 Live C4 Z1 R6 C2 Auto + C1 R7 Off U1 VSS R5 R1 1 14 VDD ENVREG 7 9 OEN VDD PIR1 R4 2 REL V1 C5 R8 3 11 Q1 LED PIRIN Q2 6 12 SENS NPIRIN LAMP R9 R10 5 ONTIME Neutral RV2 RV3 4 13 CDS1 VSS VSS T931.97-TSSOP-14 VSS Designator Typ. Value Description Note U1 E931.97 PIR Controller IC TSSOP-14 or SOIC14 U2 LHI878 Dual Element PIR Sensor TO-5 R1 1M Discharge resistor R2 100R Transient protection resistor Wire wound R3 10k Current limiting resistor R3 < (V -V )/(I + I / + I / + I Rel VDD IDD REL Q1 R7 Q2 R5 +I ) R6 R4 22k REL drive current setting resistor R4 = IREL/ Q1 R5 47k Current limiting resistor In case V =0 and RV1 is also turned to 0 CDS R6 270k Voltage divider V /4 = (RV2+RV3) / (RV2+RV3+R6) VDD R7 10k LED drive current limiting resistor R7 = (V -0.6- V )/( I ) REL LED LED R8 100k Base current setting resistor R8 = (V -0.6- V )/( I / ) REL LED LED Q2 R9 2.2M Pull down resistor R10 100k Pull down resistor L1 LED LED of own choice D1 1N4148 Fly back protection diode D2 DB104S Diode bridge Z1 ZD47 47V Zener Diode Choose according to RE1 voltage CdS1 Light dependent resistor RV1 2.2M OEN Voltage Adjust (Dark level) RV2 220k Sensitivity adjustment Select in conjunction with R6 and RV3 RV3 220k On Time adjustment Select in conjunction with R6 and RV2 V1 S10275VAC Transorb, for high voltage spike protection C1 330n/230VAC Voltage dropper capacitor C2 10F/50V Supply voltage storage Voltage rating dependant on RE1 voltage C3 1F/6V Decoupling capacitor Ceramic, close to supply pins of device C4 10F/6V Sensor supply storage Regulator compensation capacitor C5 470nF PIR signal bypass capacitor RE1 47V N.O. REL High coil voltage, less drive current S1 3 position Mains switch Table 2: Component Values for Motion Sensor Light This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0070E.00 2/7 Load