X-On Electronics has gained recognition as a prominent supplier of DMA22514F across the USA, India, Europe, Australia, and various other global locations. DMA22514F are a product manufactured by ERG. We provide cost-effective solutions for DMA22514F, ensuring timely deliveries around the world.

DMA22514F ERG

DMA22514F electronic component of ERG
Images are for reference only
See Product Specifications
Part No. DMA22514F
Manufacturer: ERG
Category: Unclassified
Description: DMA22514F
DMA22514F is a high input power-factor Corrector (PFC) integrated circuit.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 25.6025 ea
Line Total: USD 25.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 25.6025
40 : USD 22.6571

   
Manufacturer
Product Category
RoHS - XON
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Brand
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We are delighted to provide the DMA22514F from our ERG manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMA22514F and other electronic components in the ERG manufacturer and beyond.

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2008 The DMA22514F is a high-power, metal oxide field effect transistor (MOSFET) developed by ERG2008. It is designed for high-reliability applications, such as power management and energy conversion. The device features an insulated gate dielectric and integral regenerative clamped body diode. It is rated for operation up to -55°C to +175°C and offers breakdown voltage ratings from 25V to 100V. It supports pulse width modulation (PWM) controls, voltage control and current source applications. It is also suitable for automotive loads.

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