4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G Series Schematic Features: Pin Configuration Halogens free 1. Anode 2. Cathode (Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm) Current transfer ratio 3. Emitter 4. Collector (CTR: 50~600% at I =5mA, V =5V) F CE High isolation voltage between input and output (Viso=3750 V rms ) Compact 4 Pin SOP with a 2.0 mm profile Compliance with EU REACH Pb free and RoHS compliant UL and cUL approved (No. E214129) VDE approved (No. 132249) SEMKO approved NEMKO approved DEMKO approved FIMKO approved Description The EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package. Applications DC-DC Converters Programmable controllers Telecommunication equipments Signal transmission between circuits of different potentials and impedances 1 Copyright 2010, Everlight All Rights Reserved. Release Date : June 5, 2014. Issue No: DPC-0000014 Rev. 6 www.everlight.com Ver.:6 Release Date:06/12/2014 :Approved() DATASHEET 4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G series Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Rating Unit Forward current I 50 mA F Peak forward current (1us, pulse) I 1 A FP Reverse voltage V 6 V R Input 70 mW Power dissipation P D Derating factor (about Ta=100C) 2.9 mW/C 150 mW Power dissipation P C Derating factor (above T = 70C) a 3.7 mW/C Collector current I 50 mA Output C Collector-Emitter voltage 80 V V CEO Emitter-Collector voltage V 7 V ECO Total Power Dissipation P 200 mW TOT 1 Isolation Voltage* V 3750 V rms ISO Operating temperature T -55 ~ +110 C OPR Storage temperature -55 ~ +125 C T STG Soldering Temperature*2 260 C T SOL Notes: *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. *2 For 10 seconds 2 Copyright 2010, Everlight All Rights Reserved. Release Date : June 5, 2014. Issue No: DPC-0000014 Rev. 6 www.everlight.com Ver.:6 Release Date:06/12/2014 :Approved()