44 PIN DIIP PHOTTOTRANNSISTOOR PHOOTOCOUUPLER EEL817 SSeries Schemaatic Pin Configuuration FFeatures: 1. Anode 2. Cathodee Current trransfer ratio 3. Emitter (CTR: 50~600% at I =5mA, V ==5V) F CE 4. Collector High isolaation voltagee between inpput and outpuut (Viso=50000 V rms ) Creepagee distance >77.62 mm Operatingg temperaturre up to +1100C Compact small outlinee package Pb free and RoHS compliant. UL approved (No. E214129) VDE approved (No. 132249) SEMKO aapproved NEMKO aapproved DEMKO aapproved FIMKO approved CSA apprroved Deescriptionn The EL8177 series of deevices each cconsist of ann infrared emmitting diodess, optically cooupled to a pphototransistoor detector. They are ppackaged in aa 4-pin DIP ppackage andd available in wide-lead spacing and SSMD option. Appplicationns Programmmable controollers System aappliances, mmeasuring insstruments Telecommmunication equipments Home appliances, succh as fan heaters, etc. Signal traansmission bbetween circuuits of differeent potentialss and impedaances Copyright 2010, Everlight AAll Rights Reservved. Release Daate : May 21, 2013. Issue No: DPCC-0000046 Rev.13 1 wwww.everlight.ccom DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Forward current I 60 mA F Peak forward current (1us, pulse) I 1 A FP Input Reverse voltage V 6 V R 100 mW P Power Dissipation D 2.9 mW/C 150 mW P Break Down Voltage C mW/C 5.8 50 Output Collector current I mA C V 35 Collector-Emitter voltage V CEO 6 V Emitter-Collector voltage ECO V 200 P Total Power Dissipation TOT mW 1 Isolation Voltage* V 5000 V rms ISO -55 to 110 T Operating Temperature OPR C Storage Temperature T -55 to 125 C STG 2 Soldering Temperature* T 260 C SOL Notes: *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. *2 For 10 seconds 2 Copyright 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13 www.everlight.com