1MBI1600U4C-170 IGBT Modules IGBT MODULE (U series) 1700V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specied) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES 20 V Tc=25C 2400 Ic Continuous Tc=80C 1600 Tc=25C 4800 Collector current Ic pulse 1ms A Tc=80C 3200 -Ic 1600 -Ic pulse 1ms 3200 Collector power dissipation Pc 1 device 9760 W Junction temperature Tj 150 C Storage temperature Tstg -40 to +125 C Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 3400 VAC Mounting (*2) 5.75 Screw torque Main Terminals (*2) 10 Nm Sense Terminals (*2) 2.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminal : 8-10 Nm (M8), Sense Terminal : 1.7-2.5 Nm (M4) Electrical characteristics (at Tj= 25C unless otherwise specied) Characteristics Items Symbols Conditions Units min. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = 20V - - 3200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1600mA 5.5 6.5 7.5 V Tj=25C - 2.47 2.65 VCE (sat) (main terminal) Tj=125C - 2.87 - VGE = 15V Collector-Emitter saturation voltage V IC = 1600A Tj=25C - 2.25 2.40 VCE (sat) (chip) Tj=125C - 2.65 - Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 150 - nF ton - 1.80 - Turn-on time VCC = 900V, IC = 1600A tr - 0.85 - VGE = 15V, Tj = 125C s toff - 1.30 - Rgon = 2.7, Rgoff = 1 Turn-off time tf - 0.35 - VF Tj=25C - 2.02 2.40 (main terminal) Tj=125C - 2.22 - VGE = 0V Forward on voltage V IF = 1600A VF Tj=25C - 1.80 2.15 (chip) Tj=125C - 2.00 - Reverse recovery time trr IF = 1600A - 0.35 - s Lead resistance, terminal-chip (*3) R lead - 0.134 - m Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Characteristics Items Symbols Conditions Units min. typ. max. IGBT - - 0.013 Thermal resistance (1device) Rth(j-c) FWD - - 0.023 C/W Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*4) - 0.006 - Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound. 11MBI1600U4C-170 IGBT Modules Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj=25C ,chip Tj= 125C, chip 3600 3600 VGE=20V 15V 12V VGE=20V 15V 12V 3200 3200 2800 2800 2400 2400 10V 2000 2000 10V 1600 1600 1200 1200 800 800 8V 8V 400 400 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter voltage : VCE V Collector-Emitter voltage : VCE V Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip Tj=25C ,chip 3600 10 Tj=25C Tj=125C 3200 8 2800 2400 6 2000 1600 4 1200 Ic=3200A 800 2 Ic=1600A Ic=800A 400 0 0 0 1 2 3 4 5 5 10 15 20 25 Collector-Emitter voltage : VCE V Gate - Emitter voltage : VGE V Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25C Tj= 25C 1000 1000 25 VCE VGE 800 20 Cies 100 600 15 400 10 Cres 10 200 5 Coes 0 0 1 0 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 Collector-Emitter voltage : VCE V Gate charge : Qg nC 22 Capacitance : Cies, Coes, Cres nF Collector current : Ic A Collector current : Ic A Collector-Emitter voltage : VCE V Collector - Emitter voltage : VCE V Collector current : Ic A Gate-Emitter voltage : VGE V