2MBI150U2A-060-50 Fuji

2MBI150U2A-060 600V / 150A 2 in one-package IGBT Module U-Series 2. Equivalent circuit Equivalent Circuit Schematic Features Applications High speed switching Inverter for Motor drive Voltage drive AC and DC Servo drive amplifier Low inductance module structure Uninterruptible power supply Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Symbol Conditions Rating Unit Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES 20 V Collector current IC Continuous 150 A ICp 1ms 300 -IC 150 -IC pulse 300 Collector Power Dissipation PC 1 device 500 W Junction temperature Tj +150 C Storage temperature Tstg -40 to +125 Isolation voltage between terminal and copper base *1 Viso AC:1min. 2500 VAC Screw Torque Mounting *2 3.5 Nm Terminals *2 3.5 *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5Nm(M5 or M5), Terminal 2.5 to 3.5 Nm(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbols Conditions Characteristics Unit Min. Typ. Max. Zero gate voltage collector current VGE=0V, VCE=600V ICES 1.0 mA Gate-Emitter leakage current VCE=0V, VGE=20V IGES 200 nA Gate-Emitter threshold voltage VCE=20V, IC=150mA VGE(th) 6.2 6.7 7.7 V Collector-Emitter saturation voltage VGE=15V, IC=150A VCE(sat) 2.05 2.35 V Tj=25C (terminal) 2.30 Tj=125C VCE(sat) 1.80 Tj=25C (chip) 2.05 Tj=125C Input capacitance VCE=10V, VGE=0V, f=1MHz Cies 12 nF Turn-on time VCC=300V ton 0.40 1.20 s IC=150A tr 0.22 0.60 VGE=15V tr(i) 0.16 Turn-off time RG= 24 toff 0.48 1.20 tf 0.07 0.45 Forward on voltage VGE=0V VF Tj=25C 1.80 2.20 V IF=150A (terminal) Tj=125C 1.85 VF Tj=25C 1.60 (chip) Tj=125C 1.65 Reverse recovery time IF=150A trr 0.35 s Lead resistance, terminal-chip*3 R lead 1.39 m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Unit Min. Typ. Max. 0.25 Thermal resistance Rth(j-c) IGBT C/W 0.46 Rth(j-c) FWD C/W 0.05 Contact Thermal resistance Rth(c-f)*4 With thermal compound C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.IGBT Module 2MBI150U2A-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 400 400 VGE=20V 15V VGE=20V15V 300 300 12V 12V 10V 10V 200 200 100 100 8V 8V 0 0 0123 45 0 123 45 Collector-Emitter voltage : VCE V Collector-Emitter voltage : VCE V Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 400 10 8 300 6 Tj=25C 200 4 Tj=125C 100 Ic=300A 2 Ic=150A Ic= 75A 0 0 0 123 45 5 101520 25 Gate - Emitter voltage : VGE V Collector-Emitter voltage : VCE V Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C 100.0 Cies 10.0 VGE Cres 1.0 Coes VCE 0.1 0 200 400 600 800 010 20 30 Gate charge : Qg nC Collector-Emitter voltage : VCE V Capacitance : Cies, Coes, Cres nF Collector current : Ic A Collector current : Ic A Collector-Emitter voltage : VCE 200V/div Collector - Emitter voltage : VCE V Collector current : Ic A Gate - Emitter voltage : VGE 5V/div