GS66508B-EVBDB1 Gan Systems

GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board Technical Manual GS66508B-EVBDB1 GaN E-HEMT Daughter Board and GS665MB-EVB Evaluation Platform Technical Manual Visit www.gansystems.com for the latest version of this technical manual. DANGER This evaluation kit is designed for engineering evaluation in a controlled lab environment and should be handled by qualified personnel ONLY. High voltage will be exposed on the board during the test and even brief contact during operation may result in severe injury or death. Never leave the board operating unattended. After it is de-energized, always wait until all capacitors are discharged before touching the board. CAUTION This product contains parts that are susceptible to damage by electrostatic discharge (ESD). Always follow ESD prevention procedures when handling the product. GS66508B-EVBDB1 UG rev. 200526 2020 GaN Systems Inc. www.gansystems.com 1 Please refer to the Evaluation Board/Kit Important Notice on page 30 GS66508B-EVBDB1 650V GaN E-HEMT Evaluation Board Technical Manual Overview The GS66508B-EVBDB1 daughter board style evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal mother board (P/N: GS665MB-EVB) or for quick prototyping of a users own system design. Features Serves as a reference design and evaluation tool as well as deployment-ready solution for easy in- system evaluation. Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board. Current shunt position for switching characterization testing Universal form factor and footprint for all products The daughter board and universal mother board ordering part numbers are below: Table 1 Ordering part numbers Part Number GaN E-HEMT Description P/N: GS66508B-EVBDB1 GS66508B GaN E-HEMT bottom side cooled 650V/30A, 50m Analog Devices isolated driver ADUM4121ARZ GS665MB-EVB Universal 650V Mother Board Control and Power I/Os The daughter board GS6650B8-EVBDB1 circuit diagram is shown in Figure 1. The control logic inputs on 2x3 pin header J1 are listed below: Table 2 Control pins Pin Descriptipon ENA Enable input. It is internally pulled up to VCC, a low logic disables all the PWM gate drive outputs. VCC +5V auxillary power supply input for logic circuit and gate driver. On the daughter board there are 2 isolated 5V to 9V DC/DC power supplies for top and bottom switches. VDRV Optional 9V gate drive power input. This pin allows users to supply separate gate drive power supply. By default VDRV is connected to VCC on the daughter board via a 0 ohm jumper FB1. If bootstrap mode is used for high side gate drive, connect VDRV to 9V PWMH High side PWM logic input for top switch Q1. It is compatible wth 3.3V and 5V PWML Low side PWM logic input for bottom switch Q2. It is compatible wth 3.3V and 5V 0V Logic inputs and gate drive power supply ground return. GS66508B-EVBDB1 UG rev. 200526 2020 GaN Systems Inc. www.gansystems.com 2 Please refer to the Evaluation Board/Kit Important Notice on page 30