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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.2N7002DW N-Channel Enhancement Mode Field Effect Transistor
January 2015
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant
SC70-6 (SOT 363) D2 G1 S1
1
S2 G2 D1
1
Marking : 2N
Ordering Information
Part Number Top Mark Package Packing Method
2N7002DW 2N SC70 6L Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Drain-Source Voltage 60 V
DSS
V Drain-Gate Voltage (R 1.0 M) 60 V
DGR GS
Continuous 20
V Gate-Source Voltage V
GSS
Pulsed 40
Continuous 115
I Drain Current Continuous at 100C 73 mA
D
Pulsed 800
T , T Junction and Storage Temperature Range -55 to +150 C
J STG
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002DW Rev. 1.2