150K100A GeneSiC Semiconductor

150K(R)20A thru 150K(R)100A V = 200 V - 1000 V RRM Silicon Standard I = 150 A F Recovery Diode Features High Surge Capability DO-8 Package Types from 200 V to 1000 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions 150K(R)80A 150K(R)100A Parameter Symbol 150K(R)20A 150K(R)40A 150K(R)60A Unit Repetitive peak reverse voltage V 200 400 600 800 1000 V RRM V DC blocking voltage 200 400 600 800 1000 V DC T 110 C I 150 150 Continuous forward current C 150 150 150 A F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 3740 3740 3740 3740 3740 A F,SM C p current, Half Sine Wave 2 I t for fusing I t t = 8.3ms 58000 58000 58000 58000 58000 2 A sec 2 T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 150K(R)80A 150K(R)100A Parameter Symbol 150K(R)20A 150K(R)40A 150K(R)60A Unit V I = 150 A, T = 25 C 1.33 1.33 V Diode forward voltage F F j 1.33 1.33 1.33 I V = V , T = 175 C Reverse current 35 35 35 32 24 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 0.25 0.25 0.25 0.25 0.25 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) 150K(R)20A thru 150K(R)100A A 2 Oct. 2018