1N1189 GeneSiC Semiconductor

1N1188 thru 1N1190R V = 400 V - 600 V RRM Silicon Standard I = 35 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 400 to 600 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions 1N1188 (R) 1N1189 (R) 1N1190 (R) Parameter Symbol Unit Repetitive peak reverse voltage V 400 500 600 V RRM V RMS reverse voltage 280 350 420 V RMS V 400 500 600 DC blocking voltage V DC T 140 C Continuous forward current I 35 35 35 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 595 595 595 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N1188 (R) 1N1189 (R) 1N1190 (R) Parameter Symbol Unit V I = 35 A, T = 25 C 1.2 1.2 1.2 V Diode forward voltage F F j V = 50 V, T = 25 C 10 10 10 A R j I Reverse current R V = 50 V, T = 140 C 10 10 10 mA R j Thermal characteristics Thermal resistance, junction - R 0.25 0.25 0.25 C/W thJC case 1 Oct. 2018 C A A C Stud Stud (R) 1N1188 thru 1N1190R 2 Oct. 2018