1N1200A GeneSiC Semiconductor

1N1199A thru 1N1206AR V = 50 V - 600 V RRM Silicon Standard I = 12 A F Recovery Diode Features High Surge Capability DO-4 Package Types from 50 V to 600 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified j Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Parameter Symbol Unit Repetitive peak reverse V 50 100 200 400 600 V RRM voltage V 140 RMS reverse voltage 35 70 280 420 V RMS DC blocking voltage V 50 100 200 400 600 V DC I T 150 C 12 Continuous forward current C 12 12 12 12 A F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 240 240 240 240 240 A F,SM C p current, Half Sine Wave T -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N1202A(R) Parameter Symbol 1N1199A(R) 1N1200A(R) 1N1204A(R) 1N1206A(R) Unit V I = 12 A, T = 25 C 1.1 V Diode forward voltage F F j 1.1 1.1 1.1 1.1 V = 50 V, T = 25 C 10 10 10 10 10 A R j I Reverse current R V = 50 V, T = 175 C 15 15 15 15 15 mA R j Thermal characteristics Thermal resistance, junction - R 2.00 2.00 2.00 2.00 2.00 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) 1N1199A thru 1N1206AR 2 Oct. 2018