1N2133A GeneSiC Semiconductor

1N2133A thru 1N2138AR V = 300 V - 600 V RRM Silicon Standard I =60 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 300 V to 600 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified j Conditions 1N2137A(R) 1N2138A(R) Parameter Symbol 1N2133A(R) 1N2135A(R) Unit Repetitive peak reverse voltage V 300 400 500 600 V RRM V RMS reverse voltage 210 280 350 420 V RMS V 150 200 DC blocking voltage 50 100 V DC T 150 C Continuous forward current I 60 60 60 60 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 1050 1050 1050 1050 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N2137A(R) 1N2138A(R) Parameter Symbol 1N2133A(R) 1N2135A(R) Unit V I = 60 A, T = 25 C 1.1 1.1 V Diode forward voltage F F j 1.1 1.1 V = 50 V, T = 25 C 10 10 10 10 A R j I Reverse current R V = 50 V, T = 150 C 15 15 15 15 mA R j Thermal characteristics Thermal resistance, junction - R 0.65 0.65 0.65 0.65 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) 1N2133A thru 1N2138AR 2 Oct. 2018