1N3208 thru 1N3211R V = 50 V - 300 V RRM Silicon Standard I = 15 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 50 V to 300 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified j Conditions 1N3210 (R) 1N3211 (R) Parameter Symbol 1N3208 (R) 1N3209 (R) Unit Repetitive peak reverse voltage V 50 100 200 300 V RRM V RMS reverse voltage 35 140 210 V RMS 70 V 200 300 DC blocking voltage 50 100 V DC T 150 C Continuous forward current I 15 15 15 15 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 297 297 297 297 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3210 (R) 1N3211 (R) Parameter Symbol 1N3208 (R) 1N3209 (R) Unit V I = 15 A, T = 25 C 1.5 1.5 V Diode forward voltage F F j 1.5 1.5 V = 50 V, T = 25 C 10 10 10 10 A R j I Reverse current R V = 50 V, T = 150 C 10 10 10 10 mA R j Thermal characteristics Thermal resistance, junction - R 0.65 0.65 0.65 0.65 C/W thJC case 1 Oct. 2018 A C C A Stud Stud (R) 1N3208 thru 1N3211R 2 Oct. 2018