1N3296A GeneSiC Semiconductor

1N3295A(R) thru 1N3297A(R) V = 1000 V - 1400 V RRM Silicon Standard I = 100 A F Recovery Diode Features High Surge Capability DO-8 Package Types from 1000 V to 1400 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions 1N3297A(R) Parameter Symbol 1N3295A(R) 1N3296A(R) Unit Repetitive peak reverse voltage V 1000 1200 1400 V RRM V DC blocking voltage 1000 1200 1400 V DC T 130 C I 100 Continuous forward current C 100 100 A F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 2300 2300 2300 A F,SM C p current, Half Sine Wave 2 I t for fusing I t 60 Hz Half wave 22000 22000 22000 2 A sec 2 T -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3297A(R) Parameter Symbol 1N3295A(R) 1N3296A(R) Unit V I = 100 A, T = 130 C 1.5 V Diode forward voltage F F j 1.5 1.5 I V = V , T = 130 C Reverse current 11 9 7 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 0.40 0.40 0.40 C/W thJC case 1 Oct. 2018 C A A C Stud Stud (R) 1N3295A(R) thru 1N3297A(R) A 2 Oct. 2018