1N3673A GeneSiC Semiconductor

1N3671A thru 1N3673AR V = 800 V - 1000 V RRM Silicon Standard I = 12 A F Recovery Diode Features High Surge Capability DO-4 Package Types from 800 V to 1000 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified j Conditions 1N3671A (R) 1N3673A (R) Parameter Symbol Unit Repetitive peak reverse voltage V 800 1000 V RRM V RMS reverse voltage 560 700 V RMS V 800 1000 DC blocking voltage V DC T 150 C Continuous forward current I 12 12 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 240 240 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3671A (R) 1N3673A (R) Parameter Symbol Unit V I = 12 A, T = 25 C 1.1 1.1 V Diode forward voltage F F j V = 50 V, T = 25 C 10 10 A R j I Reverse current R V = 50 V, T = 175 C 15 15 mA R j Thermal characteristics Thermal resistance, junction - R 2.00 2.00 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) 1N3671A thru 1N3673AR 2 Oct. 2018