1N3766R GeneSiC Semiconductor

1N3765 thru 1N3768R V = 700 V - 1000 V RRM Silicon Standard I = 35 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 700 V to 1000 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified j Conditions 1N3767 (R) 1N3768 (R) Parameter Symbol 1N3765 (R) 1N3766 (R) Unit Repetitive peak reverse voltage V 700 800 900 1000 V RRM V RMS reverse voltage 490 560 630 700 V RMS V 900 1000 DC blocking voltage 700 800 V DC T 140 C Continuous forward current I 35 35 35 35 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 475 475 475 475 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3767 (R) 1N3768 (R) Parameter Symbol 1N3765 (R) 1N3766 (R) Unit V I = 35 A, T = 25 C 1.2 1.2 V Diode forward voltage F F j 1.2 1.2 V = 50 V, T = 25 C 10 10 10 10 A R j I Reverse current R V = 50 V, T = 140 C 10 10 10 10 mA R j Thermal characteristics Thermal resistance, junction - R 0.25 0.25 0.25 0.25 C/W thJC case 1 Oct. 2018 A C C A Stud Stud (R) 1N3765 thru 1N3768R 2 Oct. 2018