1N5830 GeneSiC Semiconductor

1N5829 thru 1N5831R V = 20 V - 40 V RRM Silicon Power I = 25 A F Schottky Diode Features High Surge Capability DO-4 Package Types up to 40V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R) Unit Repetitive peak reverse voltage V 20 25 35 V RRM V 14 17 25 RMS reverse voltage V RMS DCDC blockingblocking vvoltageoltage VV 2020 2525 3535 VV DCDC I T 100 C Continuous forward current 25 25 25 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 800 800 800 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R) Parameter Symbol Unit V I = 25 A, T = 25 C 0.58 0.58 0.58 V Diode forward voltage F F j V = 20 V, T = 25 C 2 22 R j I Reverse current mA R V = 20 V, T = 125 C 250 250 250 R j Thermal characteristics Thermal resistance, junction - R 1.8 1.8 1.8 C/W thJC case 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/1N5829 thru 1N5831R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/