1N5834R GeneSiC Semiconductor

1N5832 thru 1N5834R V = 20 V - 40 V RRM Silicon Power I = 40 A F(AV) Schottky Diode Features High Surge Capability DO-5 Package Types from 20 V to 40V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) 1N5834 (R) Unit Repetitive peak reverse voltage V 20 30 40 V RRM V 14 21 28 RMS reverse voltage V RMS DCDC blockingblocking vvoltageoltage VV 2020 3030 4040 VV DCDC T -55 to 150 -55 to 150 -55 to 150 Operating temperature C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) 1N5834 (R) Unit Average forward current (per I T = 125 C 40 40 40 A F(AV) C pkg) Peak forward surge current (per I t = 8.3 ms, half sine 800 800 800 A FSM p leg) Maximum instantaneous forward V I = 40 A, T = 25 C 0.70 0.70 0.70 V F F j voltage (per leg) T = 25 C 11 1 j Maximum instantaneous reverse I T = 100 C current at rated DC blocking 10 10 10 mA R j voltage (per leg) T = 150 C 20 20 20 j Thermal characteristics Maximum thermal resistance, R 1.45 1.45 1.45 C/W JC junction - case (per leg) Inch ponds Mounting torque 30 30 30 (in-pb) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/1N5832 thru 1N5834R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/