1N6097R GeneSiC Semiconductor

1N6097 thru 1N6098R V = 30 V - 40 V RRM Silicon Power I = 50 A F(AV) Schottky Diode Features High Surge Capability DO-5 Package Types from 30 V to 40V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions 1N6097 (R) 1N6098 (R) Unit Repetitive peak reverse voltage V 30 40 V RRM V 21 28 RMS reverse voltage V RMS DDCC blockingblocking vvoltageoltage VV 3030 4040 VV DCDC T -55 to 150 -55 to 150 Operating temperature C j Storage temperature T -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N6097 (R) 1N6098 (R) Unit Average forward current (per I T = 125 C 50 50 A F(AV) C pkg) Peak forward surge current I t = 8.3 ms, half sine 800 800 A FSM p (per leg) Maximum instantaneous V I = 50 A, T = 25 C 0.7 0.7 V F FM j forward voltage (per leg) T = 25 C 1 1 j Maximum instantaneous I T = 100C 10 10 reverse current at rated DC mA R j blocking voltage (per leg) T = 150 C 20 20 j Thermal characteristics Maximum thermal resistance, R 1.30 1.30 C/W JC junction - case (per leg) Inch ponds Mounting torque 30 30 (in-pb) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/1N6097 thru 1N6098R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/