1N8024-GA High Temperature Silicon Carbide V = 1200 V RRM Power Schottky Diode I = 2.5 A F (Tc=25C) Q = 6 nC C Features Package 1200 V Schottky rectifier RoHS Compliant 210C maximum operating temperature Electrically isolated base-plate PIN 1 Zero reverse recovery charge Superior surge current capability PIN 2 NC Positive temperature coefficient of V F Temperature independent switching behavior PIN 3 Lowest figure of merit Q /I C F 123 Available screened to Mil-PRF-19500 TO 257 (Isolated Base-plate Hermetic Package) Advantages Applications High temperature operation Down Hole Oil Drilling Improved circuit efficiency (Lower overall cost) Geothermal Instrumentation Low switching losses Solenoid Actuators Ease of paralleling devices without thermal runaway General Purpose High-Temperature Switching Smaller heat sink requirements Amplifiers Industrys lowest reverse recovery charge Solar Inverters Industrys lowest device capacitance Switched-Mode Power Supply (SMPS) Ideal for output switching of power supplies Best in class reverse leakage current at operating temperature Power Factor Correction (PFC) Maximum Ratings at T = 210 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 1200 V RRM Continuous forward current I T = 25 C 2.5 A F C T 190 C Continuous forward current I C 0.75 A F T 190 C RMS forward current I C 1.3 A F(RMS) Surge non-repetitive forward current, Half Sine I T = 25 C, t = 10 ms 8 A F,SM C P Wave Non-repetitive peak forward current I T = 25 C, t = 10 s 65 A F,max C P 2 2 2 T = 25 C, t = 10 ms I t value i dt C P 0.5 A S Power dissipation P T = 25 C 26 W tot C Operating and storage temperature T , T -55 to 210 C j stg Electrical Characteristics at T = 210 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 0.75 A, T = 25 C 1.7 F j Diode forward voltage V V F I = 0.75 A, T = 210 C 2.8 F j V = 1200 V, T = 25 C R j 1 10 Reverse current I A R V = 1200 V, T = 210 C R j 10 100 V = 400 V 6 R Total capacitive charge Q nC C I I F F,MAX V = 960 V 11 R dI /dt = 200 A/s F V = 400 V R T = 210 C j Switching time t < 17 ns s V = 960 V R V = 1 V, f = 1 MHz, T = 25 C 66 R j V = 400 V, f = 1 MHz, T = 25 C Total capacitance C R j 10 pF V = 1000 V, f = 1 MHz, T = 25 C R j 8 Thermal Characteristics Thermal resistance, junction - case R 9.52 C/W thJC Mechanical Properties 0.6 Nm Mounting torque M Dec 2014 1N8024-GA Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 4: Current Derating Curves (D = t /T, t = 400 s) P P Figure 3: Power Derating Curve (Considering worst case Z conditions ) th Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Characteristics Dec 2014