1N8033-GA
High Temperature Silicon Carbide V = 650 V
RRM
Power Schottky Diode I = 14 A
F (Tc=25C)
Q = 20 nC
C
Features Package
650 V Schottky rectifier RoHS Compliant
210 C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability PIN 1
3
Positive temperature coefficient of V
F
1
PIN 3
Temperature independent switching behavior
Lowest figure of merit Q /I
C F
Available screened to Mil-PRF-19500
SMD0.5 / TO 276 (Hermetic Package)
Advantages Applications
High temperature operation Down Hole Oil Drilling
Improved circuit efficiency (Lower overall cost) Geothermal Instrumentation
Low switching losses Solenoid Actuators
Ease of paralleling devices without thermal runaway General Purpose High-Temperature Switching
Smaller heat sink requirements Amplifiers
Industrys lowest reverse recovery charge Solar Inverters
Industrys lowest device capacitance Switched-Mode Power Supply (SMPS)
Ideal for output switching of power supplies Power Factor Correction (PFC)
Best in class reverse leakage current at operating temperature
Maximum Ratings at T = 210 C, unless otherwise specified
j
Parameter Symbol Conditions Values Unit
Repetitive peak reverse voltage V 650 V
RRM
Continuous forward current I T = 25 C 8 A
C
F
Continuous forward current I T 190 C 4.3 A
F C
RMS forward current I T 190 C 8 A
F(RMS) C
Surge non-repetitive forward current, Half Sine
I T = 25 C, t = 10 ms 32 A
F,SM C P
Wave
Non-repetitive peak forward current I T = 25 C, t = 10 s 120 A
C P
F,max
2 2 2
T = 25 C, t = 10 ms
I t value i dt C P 5 A S
Power dissipation P T = 25 C 163 W
tot C
Operating and storage temperature T , T -55 to 210 C
j stg
Electrical Characteristics at T = 210 C, unless otherwise specified
j
Values
Parameter Symbol Conditions Unit
min. typ. max.
I = 5 A, T = 25 C 1.7
F j
Diode forward voltage V V
F
I = 5 A, T = 210 C
2.9
F j
V = 650 V, T = 25 C
R j 1 5
Reverse current I A
R
V = 650 V, T = 210 C
R j 10 100
I I
F F,MAX
Total capacitive charge Q V = 400 V 20 nC
C R
dI /dt = 200 A/s
F
Switching time t V = 400 V < 25 ns
s T = 210 C R
j
V = 1 V, f = 1 MHz, T = 25 C 274
R j
Total capacitance C V = 400 V, f = 1 MHz, T = 25 C 31 pF
R j
V = 650 V, f = 1 MHz, T = 25 C
R j 29
Thermal Characteristics
Thermal resistance, junction - case R 1.38 C/W
thJC
Mechanical Properties
Mounting torque M 0.6 Nm
Dec 2014
1N8033-GA
Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics
Figure 4: Current Derating Curves (D = t /T, t = 400 s)
P P
Figure 3: Power Derating Curve
(Considering worst case Z conditions )
th
Figure 5: Typical Junction Capacitance vs Reverse Voltage Figure 6: Typical Capacitive Energy vs Reverse Voltage
Characteristics Characteristics
Dec 2014